Optical Proximity Correction Using Shape Point Hashing

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Solution Overview

Problem

Current semiconductor fabrication methods face challenges in reducing the time required for optical proximity correction (OPC) and achieving high integration and reliability in semiconductor devices.

Innovation Solution

The method involves performing OPC by generating shape points on a design pattern, producing hash values, selecting unique shape points, calculating correction biases, and applying these biases to create a correction pattern, which is then used to form a photoresist pattern on a substrate, thereby reducing the time needed for OPC and improving integration and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional OPC methods are used to correct design patterns, then manufacturing precision is improved, but the time required for correction increases significantly

Engineering Contradiction:
Improvepattern correction accuracyVSAvoidOPC processing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The layout is divided into multiple patches, and shape points are generated on the contours of design patterns within these patches. This segmentation allows the OPC process to handle complex patterns by breaking them down into manageable units, improving both accuracy and processing efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Hash values are generated for shape points to create a representative sample that copies the essential geometric information. By selecting unique shape points based on their hash values, the method creates a condensed representation that maintains pattern characteristics while reducing computational complexity.

Inventive Principle:
Principle #26Copying

2Manufacturing precision

If comprehensive OPC is performed on all design patterns, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:
Improvepattern correction accuracyVSAvoidOPC process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

Instead of applying uniform OPC to entire layouts, the method generates shape points specifically on the contours of design patterns where correction is needed. This localized approach applies correction precision exactly where required while simplifying the overall process by ignoring areas that don't need correction.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The method performs OPC on a selective subset of shape points rather than all points in the layout. By using hash values to identify and process only unique shape points, the method applies partial correction action that is sufficient for achieving the required manufacturing precision without the excessive complexity of processing every element.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces the time required for OPC, maintains consistency in the correction process, and enhances the integration and reliability of semiconductor devices by applying correction biases in a more efficient manner.

Implementation Method 1

forming a photoresist pattern on a substrate by using a photomask manufactured with the corrected layout

Methodology Applied
Scientific EffectPhotolithography: Photopolymerisation

Data Source

PatentUS20250004361A1Optical proximity correction method and semiconductor fabrication method using the same
Publication Date: 2025.01.02 SAMSUNG ELECTRONICS CO LTD
  • US20250004361A1 patent drawing
  • US20250004361A1 patent drawing
  • US20250004361A1 patent drawing

AI summary

Disclosed are semiconductor fabrication methods and optical proximity correction (OPC) methods. The semiconductor fabrication method comprises performing OPC on a design pattern of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate by using a photomask manufactured with the corrected layout. Performing the OPC includes generating shape points on a contour of the design pattern, producing a hash value of the shape point, selecting a first unique shape point that represents first shape points, determining a first correction bias of the first unique shape point, and creating a correction pattern by applying the first correction bias in common to the first shape points. Producing the hash value includes generating a query range around a target shape point and, based on geometry analysis in the query range, producing the hash value.