Spline-Based OPC Mask Layout for Edge Placement Accuracy

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Solution Overview

Problem

Existing optical proximity correction (OPC) methods face limitations in patterning reliability and flexibility, particularly in creating complex shapes and angles, leading to edge placement errors during semiconductor manufacturing.

Innovation Solution

A point-based OPC method that dissects the mask layout into segments, creates shape variable points, and uses Catmull-Rom spline curves to convert rectangular layouts into curvilinear ones, iteratively adjusting these points to minimize edge placement errors through simulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional OPC methods are used to create mask layouts, then the manufacturing process is simple, but the edge placement error and patterning accuracy are poor

Engineering Contradiction:

Improveedge placement errorVSAvoidmask layout complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The mask layout is divided into multiple segments along its edge, with shape variable points positioned at specific locations on each segment. This segmentation allows independent adjustment of each segment's shape and position, enabling precise control over edge placement while maintaining overall layout complexity at manageable levels.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Shape variable points are introduced that can dynamically adjust their positions and shapes during the OPC process. These points allow the mask layout to be flexibly modified through iterative adjustments, improving edge placement accuracy without requiring complete redesign of the entire layout.

Inventive Principle:

Principle #15Dynamics

2Adaptability or versatility

If conventional rectangular mask layouts are used, then the layout is simple to create, but the ability to create complex shapes and reduce patterning errors is limited

Engineering Contradiction:

Improveshape creation flexibilityVSAvoidpatterning accuracy

Core Design Contradiction:

Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent transitions from rectangular mask layouts to curvilinear mask layouts using Catmull-Rom spline curves. This curvature allows the creation of complex shapes that better match the desired target patterns, significantly improving adaptability for creating various geometries while enhancing patterning accuracy through smoother transitions and better optical performance.

Inventive Principle:

Principle #14Spheroidality (Curvature)

Data Source

PatentUS12631954B2Optical proximity correction (OPC) method, and methods of manufacturing mask using the OPC method

Publication Date: 2026.05.19 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided are an optical proximity correction (OPC) method capable of addressing the limitations of patterning and improving the reliability of patterning, and a mask manufacturing method using the OPC method. In the OPC method, a rectangular mask layout for a target pattern is created, the edge of the rectangular mask layout is dissected into segments, a first shape variable point is created, and a second shape variable point is created by shifting the first shape variable point on a rounded target pattern. Thereafter, a curvilinear mask layout is created based on the second shape variable point, a contour is extracted based on the curvilinear mask layout, an edge placement error (EPE) is determined, and the operations are repeated according to a predetermined criterion, thereby realizing a mask layout with minimal EPEs.