OPC Transition Area Correction for Mask Manufacturing
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Solution Overview
Problem
Existing mask manufacturing methods face challenges in ensuring a sufficient processing margin due to corner rounding phenomena in transition areas during the optical proximity correction (OPC) process.
Innovation Solution
The proposed method involves an OPC method that receives a design layout, performs baseline OPC to obtain an OPC pattern, extracts transition areas with changing widths, calculates correction lengths and angles based on simulation contours, and merges these corrections with the baseline OPC pattern to obtain a final OPC pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If baseline OPC is performed on the design layout, then the OPC pattern is obtained, but corner rounding occurs in transition areas reducing processing margin
Solution Approach 1:
The patent applies preliminary action by performing additional OPC processing specifically on transition areas before final mask manufacturing. The method identifies transition areas with width changes, calculates correction lengths and angles based on simulation contours, and applies corrective patterns to prevent corner rounding before the actual manufacturing process, thereby ensuring sufficient processing margin while maintaining pattern accuracy
Solution Approach 2:
The patent implements local quality by applying different OPC processing strategies to different areas of the pattern. Transition areas with width changes receive specialized correction processing with calculated correction lengths and angles, while other areas follow standard OPC procedures. This localized approach ensures that critical transition regions have enhanced processing margins without unnecessarily complicating the entire pattern
2Manufacturing precision
If additional correction processing is applied to transition areas, then corner rounding is minimized and processing margin is ensured, but the OPC process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the OPC process into distinct stages: baseline OPC processing, transition area identification, simulation contour generation, correction parameter calculation, and corrective pattern application. This segmentation allows each stage to be optimized independently, managing overall process complexity while achieving superior corner rounding control in critical transition areas
Solution Approach 2:
The patent implements parameter changes by calculating specific correction lengths and angles based on simulation contours of transition areas. These quantitative parameters provide precise control over corner rounding correction, transforming the complex qualitative problem of transition area optimization into a systematic parameter-based solution that can be automated and standardized
Data Source
AI summary
Provided are an optical proximity correction (OPC) method and a mask manufacturing method including the OPC method for implementing a simulation contour more stiffly to ensure a processing margin. The OPC method includes receiving a design layout for a target pattern, obtaining an OPC pattern by performing first OPC on the design layout, extracting a transition area as an area having a width that changes from a first width to a second width, which is less than the first width, from the target pattern, obtaining a simulation contour for the transition area, calculating at least one of a correction length and a correction angle based on the simulation contour, obtaining a first OPC pattern for the transition area based on at least one of the correction length and the correction angle, and obtaining a final OPC pattern by merging the first OPC pattern with the OPC pattern.