Organic Photodetector Non-Fullerene Acceptor Thermal Stability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional organic photodetectors (OPDs) face issues with thermal stability and crystallinity due to the limited solubility and suboptimal energy levels of fullerene-based n-type semiconductors, leading to performance limitations.

Innovation Solution

The development of OPDs using a non-fullerene n-type organic semiconductor small molecule as an electron acceptor and a conjugated copolymer with donor and acceptor units in random sequence as a p-type semiconductor, which forms a bulk heterojunction, enhancing solubility and preventing crystallization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If fullerene-based n-type semiconductors are used in the photoactive layer, then electron acceptance function is achieved, but thermal stability deteriorates due to crystallisation and aggregation

Engineering Contradiction:
Improvethermal stabilityVSAvoidcrystallinity
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent changes the chemical structure parameters of the n-type semiconductor from fullerene-based to non-fullerene small molecules with specific molecular weight ranges (150-300 g/mol) and controlled solubility parameters. This parameter change prevents crystallisation while maintaining electron acceptance function, thereby improving thermal stability without compromising the photoactive layer composition stability

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite photoactive layer by blending the non-fullerene n-type small molecule with the p-type conjugated copolymer in specific weight ratios (1:4 to 4:1). This composite approach allows the small molecule to prevent crystallisation while the copolymer provides structural stability, resolving the contradiction between thermal stability and compositional stability

Inventive Principle:
Principle #40Composite materials

2Use of energy by moving object

If fullerene-based n-type semiconductors are used, then electron acceptance is achieved, but energy level optimization is limited

Engineering Contradiction:
Improveenergy level optimizationVSAvoidHOMO-LUMO energy level range
Core Design Contradiction:
Use of energy by moving objectVSAdaptability or versatility

Solution Approach 1:

The patent systematically varies the HOMO and LUMO energy level parameters of the non-fullerene small molecules through molecular design, achieving HOMO levels between -5.0 to -6.0 eV and LUMO levels between -2.0 to -3.0 eV. This parameter optimization enables better energy level matching with the p-type copolymer, improving exciton dissociation efficiency and overall device performance

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent optimizes the local energy level characteristics at the interface between the n-type small molecule and p-type copolymer by carefully selecting molecules with specific HOMO-LUMO offsets. This local energy level engineering ensures efficient electron transfer from the copolymer to the small molecule while maintaining appropriate charge separation, addressing the energy level adaptability requirement

Inventive Principle:
Principle #3Local quality

3Stability of the object's composition

If non-fullerene small molecules are used to improve solubility, then crystallisation is suppressed, but manufacturing precision must be controlled

Engineering Contradiction:
ImprovesolubilityVSAvoidphotoactive layer thickness control
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent selects non-fullerene small molecules with specific molecular weight parameters (150-300 g/mol) and controlled solubility parameters in common organic solvents. These parameter choices enable the formation of uniform photoactive layers with controlled thickness (50-300 nm) through solution processing while preventing crystallisation, thus balancing solubility improvement with manufacturing precision requirements

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses solution processing techniques (spin coating, dip coating, inkjet printing) to create replicated thin films of the photoactive layer with precise thickness control. The small molecule's inherent solubility properties enable these copying processes to produce uniform layers without crystallisation defects, maintaining manufacturing precision while improving compositional stability

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves thermal stability, optimizes energy levels, and allows for higher thickness of the photoactive layer, reducing dark current and increasing device yield, while enabling efficient detection of near-infrared light and biometric applications.

Implementation Method 1

The p-type semiconductor acts as a photon absorber, forming an exciton

Methodology Applied
Scientific EffectPhoton absorption: Absorption (EM radiation)

Implementation Method 2

This exciton migrates onto the interface between the p-type semiconductor and the n-type semiconductor where it dissociates. Since the LUMO of the n-type semiconductor is deeper than that of the p-type semiconductor, the n-type semiconductor will accept the electron while the hole will remain at the p-type semiconductor

Methodology Applied
Scientific EffectExciton dissociation: Photovoltaic Effect

Data Source

PatentUS11183637B2Organic photodetector
Publication Date: 2021.11.23 RAYNERGY TEK INC
  • US11183637B2 patent drawing
  • US11183637B2 patent drawing
  • US11183637B2 patent drawing

AI summary

The invention relates to an organic photodetector (OPD) comprising a photoactive layer that contains an electron acceptor and an electron donor, the acceptor being an n-type semiconductor which is a small molecule that does not contain a fullerene moiety, and the electron donor being a p-type semiconductor which is a conjugated copolymer comprising donor and acceptor units.