Open Cavity EMIB Interconnects With TSVs for Direct Power Routing
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Solution Overview
Problem
Current 2.5D microelectronics technologies face limitations in power delivery due to the inability to connect through-silicon vias (TSVs) with standard EMIBs, leading to design restrictions and inefficient power routing around EMIBs.
Innovation Solution
The implementation of open cavity interconnects with through-silicon vias (TSVs) that allow direct connection between EMIB chiplets, enabling efficient power delivery by forming electrical pathways through silicon interposers and using palladium seeds, nickel, palladium, and gold layers for enhanced connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If power delivery is done by routing around EMIBs, then power can be delivered to dies, but it utilizes a great deal of space and causes severe design restrictions
Solution Approach 1:
The patent transitions from 2D routing around EMIBs to 3D vertical routing through EMIBs using TSVs. The through-silicon vias enable power and signal pathways to extend through the third dimension (vertical direction), allowing direct connection between EMIB chiplets and underlying substrates without consuming lateral space.
Solution Approach 2:
The patent introduces TSVs as intermediary structures that facilitate direct electrical connection between EMIB chiplets and the substrate. These vias act as mediators that transfer power and signals vertically through the EMIB thickness, eliminating the need for lateral routing around the EMIB edges.
2Adaptability or versatility
If TSV connections are implemented with standard EMIB, then direct connection is possible, but current technology has no HVM solution and requires non-standard processes
Solution Approach 1:
The patent makes the EMIB process flow universal by enabling it to produce both standard EMIBs and EMIBs with TSVs using the same manufacturing process. The EMIB process flow is adapted to accommodate TSV formation, allowing a single process to create multi-functional interconnect structures that support both lateral and vertical connectivity.
Solution Approach 2:
The patent modifies process parameters within the existing EMIB manufacturing flow to enable TSV formation. By adjusting deposition, etching, and filling parameters, the process creates vertical vias through the EMIB structure without requiring fundamentally different manufacturing equipment or techniques, thus maintaining ease of manufacture while achieving enhanced connectivity.
3Reliability
If routing around EMIBs is used for power delivery, then power can be delivered, but it causes severe design restrictions
Solution Approach 1:
The patent resolves design restrictions by moving power delivery from 2D lateral routing to 3D vertical routing through TSVs. This dimensional change provides designers with additional routing directions and pathways, significantly increasing design flexibility and eliminating constraints imposed by peripheral-only power delivery routes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient power delivery to multiple dies without routing around EMIBs, improving design flexibility and bandwidth scaling while allowing for better thermal management and cooling through air circulation.
Implementation Method 1
a palladium seed may be located in between the solder resist layer and the substrate
Implementation Method 2
using palladium seeds, nickel, palladium, and gold layers for enhanced connectivity
Data Source
AI summary
Disclosed herein are microelectronics package architectures utilizing open cavity interconnects for multi-die interconnect bridges and methods of manufacturing the same. The microelectronics packages may include a substrate, a first die, a solder resist layer, a first pad, and a bridge. The substrate may have a substrate surface. The solder resist layer may be connected to the substrate and may define an opening. The first pad may protrude from the substrate surface. The bridge may be located at least partially within the opening and in between the first die and the substrate. The bridge may include a first via that forms a first electrical pathway from the first pad to the first die.