Open TSV Sublayer Structure for Stress Compensation and Crack Control
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Solution Overview
Problem
Conventional through-substrate via (TSV) structures face challenges due to significant stress gradients between different material layers, leading to unwanted strain and increased cracking probability.
Innovation Solution
The implementation of sublayers in the insulation and/or capping layers during TSV manufacturing, where these sublayers possess distinct intrinsic stress properties, helps in compensating for unwanted stress and reducing cracking probability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stress or pressure
If a high stress insulation layer is employed to compensate for stress in remaining layers, then stress compensation is improved, but cracking probability inside the TSV trench increases
Solution Approach 1:
The insulation layer is divided into multiple sublayers with different stress characteristics. The first sublayer has compressive stress and the second sublayer has tensile stress, allowing them to compensate for each other and balance the overall stress in the TSV structure, thereby preventing cracking while maintaining stress compensation.
Solution Approach 2:
Different sublayers are assigned different stress properties (compressive vs. tensile) to create local stress variations that collectively balance the overall stress distribution. This local differentiation allows precise control of stress compensation without inducing cracking in critical regions.
2Adaptability or versatility
If different material layers with distinct material properties are employed, then functional requirements are met, but stress gradients between layers increase
Solution Approach 1:
The stress parameters of the insulation layer are modified by dividing it into sublayers with different stress characteristics. This parameter change allows the system to meet functional requirements while controlling stress gradients through the balanced combination of compressive and tensile sublayers.
3Stability of the object's composition
If sublayers with different intrinsic stress are deposited, then strain compensation is improved, but manufacturing complexity increases
Solution Approach 1:
The insulation layer is segmented into multiple sublayers that can be deposited using standard semiconductor manufacturing techniques. While this segmentation improves strain compensation through different intrinsic stress properties, it does increase manufacturing complexity compared to a single-layer approach.
Data Source
AI summary
An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.