Open-Type Surface Activation Chamber for Semiconductor Wafer Bonding
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Solution Overview
Problem
Current surface activation processes in semiconductor wafer bonding, especially in hybrid wafers with multiple surface materials and metal, suffer from particle contamination due to chemical interactions within sealed chambers, which can damage wafers and weaken bond strength.
Innovation Solution
An open-type surface activation chamber design where gas and plasma are continuously exhausted during the activation process, using adjustable electrodes and optical emission spectroscopy to maintain a desired plasma density, and a chamber cleaning process to remove residual contaminants, preventing particle trapping and ensuring effective bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a closed-type surface activation process is used in a sealed chamber, then the plasma density is maintained for effective surface activation, but particle contamination occurs due to chemical interactions between plasma and wafer surface materials
Solution Approach 1:
The patent extracts and removes particles from the chamber during the surface activation process using a particle removal system that operates concurrently with plasma generation. This allows the chamber to remain sealed for plasma density maintenance while actively removing harmful particles through extraction mechanisms.
2Object-generated harmful factors
If an open-type surface activation process is used to exhaust gas and plasma, then particle contamination is reduced, but the plasma density decreases lowering activation effectiveness and bond strength
Solution Approach 1:
The patent implements continuous particle removal throughout the entire surface activation process while maintaining the sealed chamber environment. This continuous action ensures that particles are constantly extracted without interrupting the plasma generation, allowing both low contamination and high plasma density to coexist.
Solution Approach 2:
The particle removal system is activated before and during the surface activation process to prevent particle accumulation. By establishing particle extraction in advance and maintaining it throughout activation, the system prevents contamination before it can compromise bond strength.
3Reliability
If a sealed chamber is used for surface activation, then plasma density is maintained for effective activation, but particles are trapped in the chamber and may damage wafers or subsequent wafers
Solution Approach 1:
The patent employs an active particle extraction system that continuously removes particles from the sealed chamber during surface activation. This extraction mechanism prevents particle accumulation and potential wafer damage while maintaining the sealed environment necessary for high plasma density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces particle contamination, maintains high plasma density for effective surface activation, and strengthens the bonds formed during the bonding process while preventing damage to wafers and chamber components.
Implementation Method 1
The electrodes excite and ionize the gas molecules, forming plasma
Implementation Method 2
using adjustable electrodes and optical emission spectroscopy to maintain a desired plasma density
Data Source
AI summary
An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, and an adjustable bottom electrode. The low contamination chamber is configured to adjust a distance between the adjustable top electrode and the adjustable bottom electrode in response to a desired density of plasma and a measured density of plasma measured between the adjustable top electrode and the adjustable bottom electrode during a surface activation process. The low contamination chamber further includes an outlet.