Open-Winding Inverter Switch Layout for Lower Power Loss
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Solution Overview
Problem
Existing power conversion devices for open winding motors experience power loss, overheating, and inefficiency due to switches being constantly on during star connection driving.
Innovation Solution
The power conversion device employs a configuration where the first semiconductor switching device with high conduction characteristics is used for the upper arm of the second inverter and the line-connecting switching device, while the second semiconductor switching device is used for the lower arm of the second inverter, to minimize power loss during both star and delta connection driving.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If switches are constantly on during star connection driving, then the motor can be driven in star connection mode, but power loss increases and overheating occurs
Solution Approach 1:
The patent applies local quality by using different semiconductor switching devices for different positions in the circuit. Specifically, the first semiconductor switching device with superior conduction characteristics is used for switches that remain constantly on during star connection driving (Q1, Q2, Q3, Q4, Q5, Q6), while the second semiconductor switching device is used for other positions. This localized optimization reduces power loss and overheating in the constantly-on switches without compromising overall system functionality.
2Loss of energy
If first semiconductor switching device with high conduction characteristics is used for constantly-on switches, then power loss is suppressed, but device cost increases
Solution Approach 1:
The patent implements cost-effective local quality optimization by strategically deploying expensive first semiconductor switching devices only where they are most needed (in constantly-on switches during star connection), while using cheaper second semiconductor switching devices in other positions where high conduction characteristics are less critical. This selective application minimizes overall device cost while achieving the primary goal of reducing power loss.
Solution Approach 2:
The patent applies partial action by using the superior first semiconductor switching device not for all switches in the system, but only for the specific switches that remain constantly on during star connection driving. This partial deployment of high-performance components achieves sufficient power loss reduction without the excessive cost of upgrading all switches in the system.
3Ease of operation
If switches are constantly on, then star connection driving is enabled, but overheating of switching devices occurs
Solution Approach 1:
The patent addresses overheating through local quality optimization by equipping constantly-on switches (Q1-Q6) with first semiconductor switching devices that have superior conduction characteristics and lower on-resistance. This localized enhancement specifically targets the heat-generating components during star connection driving, effectively reducing overheating without requiring system-wide upgrades.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses power loss and overheating, while maintaining cost-effectiveness by using less expensive second semiconductor switching devices for the lower arm of the second inverter.
Implementation Method 1
A semiconductor switching device that has higher conduction characteristics as compared to the second semiconductor switching device is used as the first semiconductor switching device
Data Source
AI summary
Three switching devices of the upper arm and the lower arm of the three switching devices of the lower arm of the first inverter and the three switching devices of the upper arm of the second inverter and the switching device for line-connecting are constituted by a first semiconductor switching device, the three switching devices of the lower arm of the second inverter is constituted by a second semiconductor switching device different from the first semiconductor switching device, a semiconductor switching device which is superior in conduction characteristics compared to the second semiconductor switching device as the first semiconductor switching device is used.