Operating Capacitors in Peripheral Circuit Region for Semiconductor Memory
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Solution Overview
Problem
Conventional semiconductor memory devices face increased leakage current and contact resistance due to short channel effects and pattern density differences between cell and peripheral circuit regions, leading to loading effects and pattern formation deviations during manufacturing processes.
Innovation Solution
The semiconductor memory device incorporates operating capacitors in the peripheral circuit region, replacing dummy patterns to stabilize voltage levels and prevent noise, with these capacitors being strategically positioned to match the pattern density of the cell region and optimized in size and placement to ensure uniform critical dimensions and reduced loading effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dummy patterns are formed in the peripheral circuit region to minimize loading effect, then pattern formation deviation is reduced, but the region where transistors can be formed is reduced and noise protection capability is insufficient
Solution Approach 1:
The operating capacitors are positioned in the peripheral circuit region to serve dual purposes: they act as dummy patterns to minimize loading effects during manufacturing processes, and simultaneously function as noise protection elements for DC circuits. This multi-functional approach eliminates the need for separate dummy patterns while enhancing noise protection capability.
Solution Approach 2:
The operating capacitors serve themselves by being positioned in the peripheral circuit region where they naturally fulfill both roles: providing capacitance for noise protection and acting as dummy patterns to balance pattern density. The same structural elements perform multiple functions without requiring additional dedicated components.
2Manufacturing precision
If pattern density is increased uniformly across all regions, then loading effect is minimized, but leakage current increases due to short channel effect in transistors
Solution Approach 1:
The patent applies different pattern densities to different regions: the cell region maintains high pattern density for loading effect minimization, while the peripheral circuit region has lower pattern density to reduce transistor leakage current. The operating capacitors are strategically positioned in the peripheral region to provide dummy pattern coverage without increasing transistor density.
Solution Approach 2:
The semiconductor device is divided into distinct regions (cell region and peripheral circuit region) with different pattern density characteristics. The operating capacitors are specifically positioned in the peripheral circuit region to provide local dummy pattern coverage, allowing each region to have optimized pattern density for its specific functional requirements.
3Productivity
If transistor size is reduced to increase integration density, then productivity is improved, but contact resistance increases and leakage current worsens
Solution Approach 1:
The patent optimizes transistor dimensions locally in the peripheral circuit region, making them larger than in the cell region to reduce contact resistance and leakage current. The operating capacitors are positioned to compensate for the reduced pattern density in this region, allowing larger transistors without compromising manufacturing precision.
Solution Approach 2:
The patent changes the physical parameters of transistors in different regions, specifically increasing transistor size in the peripheral circuit region to reduce contact resistance and leakage current. The operating capacitors are positioned to maintain appropriate pattern density despite these parameter changes.
Data Source
AI summary
A semiconductor memory device comprises a cell region including a plurality of unit memory cells, and a peripheral circuit region, the peripheral circuit region including a plurality of peripheral circuit devices for operating the plurality of memory cells and at least one operating capacitor formed adjacent to at least one peripheral circuit device at a pseudo circuit pattern region.