Optical Wafer Bonding Monitoring With Aberration-Corrected Feedback
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Solution Overview
Problem
Existing methods for monitoring substrate bonding processes, particularly in wafer-to-wafer bonding, lack rapid and effective feedback mechanisms, which are crucial for high-performance and high-volume production in integrated circuit manufacturing.
Innovation Solution
A substrate bonding apparatus equipped with an optical metrology sensor that measures the scattering and reflection of radiation through substrates to be bonded, corrects for optical aberrations, and monitors bonding parameters, enabling real-time monitoring and correction of the bonding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional monitoring methods are used for substrate bonding, then the bonding process can be performed, but rapid and accurate feedback is not provided, reducing productivity and manufacturing precision
Solution Approach 1:
The patent implements an optical monitoring system that provides real-time feedback during substrate bonding by measuring complex field radiation (amplitude and phase) through the substrates. The system continuously monitors bonding parameters such as substrate position, flatness, and bonding progress, and feeds this information back to control the bonding process, enabling rapid and accurate adjustments to maintain optimal bonding conditions.
Solution Approach 2:
The patent replaces conventional mechanical or contact-based monitoring methods with optical measurement techniques. By using optical radiation to measure the complex field through the substrates, the system achieves non-contact, rapid, and precise measurement of bonding parameters without mechanical interference, thereby improving both productivity and measurement precision.
2Speed
If optical radiation is used to monitor bonding through substrates, then rapid feedback is provided, but optical aberrations occur, degrading measurement precision
Solution Approach 1:
The system uses optical feedback to continuously monitor bonding parameters in real-time. By measuring the complex field radiation that has passed through the substrates, the system provides rapid feedback on substrate position, flatness, and bonding progress, enabling quick adjustments while maintaining measurement accuracy through continuous optimization.
Solution Approach 2:
The patent measures the complex field of radiation, which includes both amplitude and phase information. By utilizing phase information in addition to amplitude, the system can extract more precise bonding parameters and compensate for optical aberrations, thereby maintaining high measurement precision while achieving rapid feedback through optical methods.
3Measurement precision
If complex field measurement is implemented, then accurate bonding parameter monitoring is achieved, but device complexity increases
Solution Approach 1:
The optical monitoring system is designed to perform multiple functions using a single integrated apparatus. The same optical system measures both amplitude and phase of the complex field, enabling simultaneous monitoring of multiple bonding parameters (substrate position, flatness, bonding progress) without requiring separate measurement systems, thereby reducing overall device complexity while maintaining high measurement precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Provides rapid and accurate feedback for substrate bonding processes, enhancing the precision and efficiency of wafer-to-wafer bonding in integrated circuit manufacturing.
Implementation Method 1
an optical metrology sensor configured to measure a complex field of radiation propagating through a donor substrate and/or acceptor substrate to be bonded, said complex field of radiation the result of scattering and/or reflection of illumination radiation by a target structure
Implementation Method 2
an optical metrology sensor configured to measure a complex field of radiation propagating through a donor substrate and/or acceptor substrate to be bonded, said complex field of radiation the result of scattering and/or reflection of illumination radiation by a target structure
Data Source
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AI summary
There is provided a substrate bonding apparatus comprising: a donor substrate support; an acceptor substrate support, an optical metrology sensor configured to measure a complex field of radiation propagating through a donor substrate and/or acceptor substrate to be bonded, said complex field of radiation the result of scattering and/or reflection of illumination radiation by a target structure comprised on the donor substrate and/or the acceptor substrate; and a controller configured to; correct the measured complex field for optical aberrations; and monitor a bonding parameter of interest based on a corrected complex field.