Optical Bridge Packages With Temperature-Stabilized Modulators
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Solution Overview
Problem
Existing electrical interconnects in semiconductor dies consume high power, have pin count limitations, and are inefficient for data transfer, especially in AI computing hardware where memory is centrally located, leading to increased latency and power consumption.
Innovation Solution
Implementing optical multi-die interconnect bridges (OMIBs) with temperature-stabilized modulators that enable photonic data transfer directly to the central region of the die, reducing electrical pipeline stages and utilizing less power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If electrical interconnects are used for data transfer in semiconductor dies, then data transfer can be achieved, but power consumption is high and latency is increased
Solution Approach 1:
The patent replaces electrical interconnects with optical interconnects using photonic integrated circuits. Light signals travel through waveguides to transfer data between processor dies and memory dies, substituting electrical signal transmission with optical signal transmission to reduce power consumption and increase data transfer speed.
Solution Approach 2:
The patent introduces an optical bridge as an intermediary component that couples processor dies to memory dies. This optical bridge contains photonic integrated circuits with modulators, waveguides, and photodetectors that enable optical signal transmission between dies, serving as a mediator to eliminate direct electrical interconnects.
2Productivity
If memory is centrally located in AI computing hardware, then data access efficiency can be improved, but latency and power consumption increase due to electrical interconnect limitations
Solution Approach 1:
The patent replaces electrical interconnects with optical interconnects to enable faster data access from centrally located memory to processors. Optical signals travel faster and with lower attenuation than electrical signals, reducing latency and improving data access efficiency for AI computing workloads.
3Adaptability or versatility
If optical modulators operate over extended temperature ranges, then device versatility is improved, but modulation performance degrades due to temperature-dependent bias voltage variations
Solution Approach 1:
The patent implements temperature sensing and feedback control in the photonic integrated circuit. Temperature sensors monitor the operating temperature and provide feedback to bias voltage control circuits, which adjust the bias voltage applied to modulators to compensate for temperature-induced performance variations, maintaining stable modulation performance across extended temperature ranges.
Solution Approach 2:
The patent dynamically adjusts the bias voltage parameter of optical modulators based on temperature conditions. By changing the bias voltage in response to temperature variations, the system compensates for temperature-dependent shifts in modulator characteristics, enabling reliable operation over extended temperature ranges.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
OMIBs provide faster data transfer with reduced latency and power consumption, enabling efficient AI computing by moving data photonically to the point of compute rather than to the edge of the die.
Implementation Method 1
a modulator with a first modulator input
Implementation Method 2
a photodetector with a second photodetector output
Implementation Method 3
a waveguide optically coupling the modulator to the photodetector
Data Source
AI summary
A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.


