Optical Interconnect Bridges for Extended-Temperature PIC Packages
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electrical interconnects in semiconductor dies for AI and machine learning applications face high power consumption, pin count limitations, and inefficiency in data transfer, especially when memory is centralized, leading to increased latency and power usage.
Innovation Solution
Implementing optical multi-die interconnect bridges (OMIBs) with temperature-stabilized modulators that bridge semiconductor dies, allowing photonic data transfer directly to the central memory region, reducing electrical pipeline stages and using less power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If electrical interconnects are used to transfer data between semiconductor dies, then data transfer can be achieved, but power consumption is high and pin count is limited
Solution Approach 1:
The patent replaces electrical interconnects with optical interconnects using photonic integrated circuits. Light-based data transfer substitutes for electron-based electrical signals, enabling higher bandwidth and lower power consumption for data transfer between semiconductor dies while eliminating pin count limitations
Solution Approach 2:
The patent introduces an optical bridge as an intermediary component between semiconductor dies. This optical bridge uses photonic integrated circuits with modulators and photodetectors to convert electrical signals to optical signals and back, enabling efficient data transfer without direct electrical pin connections
2Device complexity
If memory is centralized in semiconductor packages, then integration is improved, but latency increases due to additional electrical pipeline stages
Solution Approach 1:
The patent replaces electrical signal transmission with optical signal transmission to connect centralized memory with processing units. The optical interconnect bridge enables direct photonically-coupled access to memory, eliminating multiple electrical pipeline stages and reducing latency while maintaining centralized memory architecture
Solution Approach 2:
The patent transitions from two-dimensional electrical signal routing through multiple pipeline stages to three-dimensional photonic signal transmission through the optical bridge. This dimensional change allows direct optical paths to memory locations, reducing the number of intermediate stages and latency
3Adaptability or versatility
If optical modulators operate over extended temperature ranges, then environmental adaptability is improved, but modulation performance degrades due to temperature dependence
Solution Approach 1:
The patent uses temperature-dependent bias voltages applied to the optical modulators to compensate for temperature-induced performance degradation. By dynamically adjusting the bias voltage parameter based on temperature conditions, the modulators maintain stable modulation performance across extended temperature ranges from -40°C to 125°C
Solution Approach 2:
The patent implements temperature compensation mechanisms that monitor temperature conditions and adjust modulator bias voltages accordingly. This feedback control ensures that modulation performance remains reliable across varying temperature conditions by counteracting temperature-dependent drift
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
OMIBs provide faster data transfer with reduced power consumption and improved latency by carrying data photonically to the point of compute, enabling efficient AI system operation.
Implementation Method 1
a modulator (MOD 1721, 1741, 1761, 1781) with a first modulator input
Implementation Method 2
a photodetector (PD 1722, 1742, 1762, 1782) with a second photodetector output
Data Source
AI summary
A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.