Optically Bridged Multicomponent Package With Thermal Drift Compensation
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Solution Overview
Problem
Existing electrical interconnects in semiconductor dies for AI workloads face high power consumption, pin count limitations, and inefficiency in data transfer, especially when memory is centralized, leading to increased latency and bandwidth constraints.
Innovation Solution
Implementing optical multi-die interconnect bridges (OMIBs) with temperature-stabilized modulators that bridge semiconductor dies, allowing photonic data transfer directly to the central compute region, reducing electrical pipeline stages and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If electrical interconnects are used to transfer data between semiconductor dies, then data transfer can be achieved, but power consumption increases and pin count limitations occur
Solution Approach 1:
The patent replaces electrical interconnects with optical interconnects using photonic integrated circuits. Light signals carry data between semiconductor dies instead of electrical signals, eliminating resistive heating and reducing power consumption while increasing data transfer bandwidth and efficiency.
Solution Approach 2:
The patent changes the physical parameter of signal transmission from electrical to optical domain. By using photons instead of electrons for data transmission, the system achieves lower power consumption and higher bandwidth, fundamentally altering the transmission medium's properties.
2Productivity
If memory is centralized in semiconductor packages, then bandwidth can be increased, but latency increases due to distance from compute regions
Solution Approach 1:
The patent segments the memory system into distributed photonic memory modules positioned close to compute regions rather than centralized memory. This segmentation allows each compute region to access its local memory through low-latency optical connections while maintaining high aggregate bandwidth across the system.
Solution Approach 2:
The patent transitions from two-dimensional electrical interconnects on a planar substrate to three-dimensional optical interconnects using vertical stacking and photonic waveguides. This enables memory to be positioned in multiple spatial dimensions close to compute regions, reducing latency while maintaining high bandwidth through parallel optical channels.
3Speed
If optical multi-die interconnect bridges are implemented, then data transfer speed increases, but temperature stability becomes critical for modulator operation
Solution Approach 1:
The patent implements temperature sensing and feedback control circuits that continuously monitor the temperature of photonic modulators and adjust operating parameters accordingly. This feedback mechanism compensates for temperature-induced wavelength drift and maintains optimal modulator performance across varying thermal conditions.
Solution Approach 2:
The patent uses temperature-compensated modulator designs that dynamically adjust operational parameters such as bias voltage and drive current based on temperature conditions. This parameter adjustment compensates for thermal effects on refractive index and maintains stable optical modulation performance across extended temperature ranges.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
OMIBs provide faster, more efficient data transfer with reduced latency and power usage by carrying data photonically to the point of compute, enabling feasible complex AI systems.
Implementation Method 1
a modulator with a first modulator input... The driver circuit is electrically coupled with the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region
Implementation Method 2
The modulator is configured to receive a temperature-dependent bias voltage. The temperature dependence of the temperature-dependent bias voltage inversely matches the temperature dependence of the modulator over an extended temperature range
Data Source
AI summary
A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.