Semiconductor Optical Chip Shape for Residue-Free Substrate Etching
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Solution Overview
Problem
The existing methods for manufacturing semiconductor optical devices face challenges with residue formation during etching, which hinders subsequent processes due to anisotropy, leading to obstacles in resist application and device performance.
Innovation Solution
The method involves forming a chip with a III-V compound semiconductor and a first substrate, where the chip has a non-perpendicular shape in plan view, allowing easier etching in one direction than the other, thereby reducing residue occurrence by minimizing exposure of low etching rate surfaces and facilitating more efficient substrate removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional etching is performed on a chip with perpendicular sides, then substrate removal is achieved, but residue formation occurs due to anisotropy of etching
Solution Approach 1:
The chip is designed with asymmetric side orientations where sides are not perpendicular to the first direction. This asymmetric geometry prevents the exposure of crystal planes with low etching rates during the etching process, thereby eliminating residue formation while maintaining effective substrate removal.
2Device complexity
If chip sides are oriented perpendicular to the first direction, then manufacturing simplicity is maintained, but etching residues occur on low etching rate surfaces
Solution Approach 1:
The invention adopts asymmetric chip side orientations that are not perpendicular to the first direction. This design choice, while slightly increasing geometric complexity, effectively prevents residue formation by ensuring that low etching rate surfaces are not exposed during the etching process.
3Productivity
If etching proceeds in all directions equally, then complete substrate removal is achieved, but residue formation occurs due to anisotropic etching characteristics
Solution Approach 1:
By orienting chip sides asymmetrically (not perpendicular to the first direction), the etching process can proceed with high efficiency while the asymmetric geometry ensures that the etch front does not expose crystal planes with low etching rates, thereby achieving both complete substrate removal and residue-free surfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach suppresses residue formation during etching, enhancing the manufacturing process by ensuring easier substrate removal and improving the quality of the semiconductor optical device.
Implementation Method 1
bonding the semiconductor layer of the chip to the first substrate
Implementation Method 2
removing the second substrate by etching the chip bonded to the first substrate
Data Source
AI summary
A method of manufacturing a semiconductor optical device is a method of manufacturing a semiconductor optical device including a chip containing a III-V compound semiconductor and a first substrate. The chip includes a second substrate and a semiconductor layer stacked on the second substrate. The method includes forming the chip by cutting the second substrate and the semiconductor layer, bonding the semiconductor layer of the chip to the first substrate, removing the second substrate by etching the chip bonded to the first substrate. A shape of the chip in plan view does not have a side perpendicular to a first direction. In the removing the second substrate, etching proceeds more easily in a second direction crossing the first direction than in the first direction.