Optical Chip Heat Isolation Substrate Thermal Crosstalk
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Solution Overview
Problem
Existing optical chips suffer from serious thermal crosstalk due to the high thermal conductivity of the substrate silicon, which can lead to inefficient heat dissipation and increased electrical power consumption.
Innovation Solution
The optical chip incorporates a heat isolation substrate with a thermal conductivity less than 100 W/(m·K), such as silicon dioxide, quartz, or glass, which is thicker than 50 μm to effectively reduce heat transmission from the substrate to the optical devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a thick substrate silicon is used in SOI substrate, then mechanical strength and structural stability are improved, but thermal conductivity increases causing serious thermal crosstalk
Solution Approach 1:
The patent introduces a heat isolation layer made of low thermal conductivity material (such as silicon dioxide, air gap, or vacuum) between the substrate silicon and the optical devices. This intermediary layer blocks the heat transmission path from the thick substrate to the optical devices, thereby reducing thermal crosstalk while maintaining the mechanical strength benefits of the thick substrate.
Solution Approach 2:
The substrate structure is segmented into distinct functional layers: the thick substrate silicon layer for mechanical support, the heat isolation layer for thermal management, and the optical device layer for functionality. This segmentation allows each layer to optimize its specific function without compromising the others.
2Temperature
If a TEC (Thermo Electric Cooler) is added as a heat dissipation device, then heat dissipation performance is improved, but electrical power consumption increases to Watt level
Solution Approach 1:
The patent extracts the active cooling function (TEC) and replaces it with a passive thermal isolation approach. By removing the need for active heat dissipation devices and instead using a heat isolation layer to prevent heat generation in the first place, the system eliminates the high electrical power consumption associated with TEC operation.
Solution Approach 2:
The heat isolation layer provides self-service thermal management by passively blocking heat transmission through its material properties. No external energy input or active control is required - the layer inherently prevents heat flow from the substrate to the optical devices based on its low thermal conductivity.
3Object-affected harmful factors
If the substrate silicon thickness is reduced, then thermal crosstalk is reduced, but mechanical strength and structural stability deteriorate
Solution Approach 1:
The heat isolation layer acts as a mediator that allows the substrate to maintain its thick structure for mechanical strength while preventing the thermal disadvantage. The intermediary layer decouples the mechanical function (requiring thickness) from the thermal function (suffering from thickness).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces thermal crosstalk in optical chips without increasing electrical power consumption, allowing for more efficient heat management and improved performance.
Implementation Method 1
the heat isolation substrate includes at least one material layer formed of a material with a thermal conductivity less than 100 W/(m·K)
Data Source
AI summary
The present application discloses an optical chip and a preparation method for the optical chip. The optical chip includes a heat isolation substrate and an optical device structure layer formed based on a top silicon layer in an SOI substrate and located above the heat isolation substrate; where the heat isolation substrate is in a single-layer material structure or a laminated structure including a plurality of material layers, and the heat isolation substrate comprises at least one material layer formed of a material with a thermal conductivity less than 100 W/(m·K); the optical device structure layer sequentially from bottom to top includes: a protection layer; and a first optical device layer located on the protection layer and including at least one first optical device, where a light beam exiting through the optical device structure layer exits upward to a detection space.