Optical Modulation Amplifier Chip With Segmented Gain and Fast Modulation

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Solution Overview

Problem

Conventional optical modulation and amplification technologies face challenges in achieving both high gain amplification and fast modulation speeds simultaneously due to limitations such as low saturated optical power and significant electrical parasitic parameters in semiconductor optical amplifiers.

Innovation Solution

An optical modulation and amplification chip design with distinct regions for amplifying and modulating functions, where one region is optimized for high gain and the other for output power, utilizing, and a method, and the other for fast modulation, with the first region and the other for amplifying and modulating, respectively, to achieve high gain and high output power.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a semiconductor optical amplifier (SOA) is used for optical amplification, then optical gain can be achieved, but the saturated optical power is low and electrical parasitic parameters are significant, limiting both output power and modulation speed

Engineering Contradiction:
Improveoutput optical powerVSAvoidmodulation speed
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The optical amplifier is divided into two separate regions: a first region optimized for high gain amplification and a second region optimized for fast modulation and high saturated output power. This segmentation allows each region to be independently optimized for its specific function, resolving the contradiction between gain and speed/power by distributing these competing requirements across separate physical domains within the same device structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the optical amplifier are designed with different local properties: the first region has structural characteristics optimized for high optical confinement and gain, while the second region has characteristics optimized for fast modulation response and high saturated power. This local quality differentiation enables simultaneous achievement of high gain and fast modulation without the trade-offs inherent in uniform designs.

Inventive Principle:
Principle #3Local quality

2Power

If the optical confinement factor is increased to achieve high gain amplification, then amplification performance improves, but the device may suffer from increased parasitic parameters and reduced modulation speed

Engineering Contradiction:
Improveamplification gainVSAvoidmodulation speed
Core Design Contradiction:
PowerVSSpeed

Solution Approach 1:

The device is segmented into two regions with different optical confinement factors: the first region has a higher optical confinement factor for high gain, while the second region has a lower optical confinement factor for fast modulation. This spatial segmentation resolves the contradiction by allowing high gain where needed without compromising overall modulation speed.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The optical confinement factor is locally optimized in different regions: high in the first region for amplification and lower in the second region for modulation. This local quality variation allows the device to achieve high gain amplification while maintaining fast modulation capabilities in the second region.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables high gain amplification and high output power, reducing parasitic parameters and enhancing extinction ratio and optical power of pulsed light.

Implementation Method 1

The first region is for amplifying light transmitted in the first waveguide

Methodology Applied
Scientific EffectStimulated emission:

Implementation Method 2

the second region is for amplifying and modulating the light transmitted in the second waveguide to obtain pulsed light

Methodology Applied
Scientific EffectStimulated emission:

Implementation Method 3

the second region is for amplifying and modulating the light transmitted in the second waveguide

Methodology Applied
Scientific EffectElectro-optic effect: Electro-Optic Effects

Implementation Method 4

A first waveguide of the first region and a second waveguide of the second region are connected in series along a light transmission direction

Methodology Applied
Scientific EffectTotal internal reflection: Total Internal Reflection

Data Source

PatentEP4668011A1Optical modulation and amplification chip, light source chip, optical module, and related method
Publication Date: 2025.12.24 HUAWEI TECH CO LTD
  • EP4668011A1 patent drawingFigure 1
  • EP4668011A1 patent drawingFigure 2~3
  • EP4668011A1 patent drawingFigure 4~5

AI summary

An optical modulation and amplification chip, a light source chip (1002), an optical module, and an optical modulation and amplification method are disclosed, which simultaneously satisfy the needs for achieving high gain amplification, rapid modulation, and high output power for input light. The optical modulation and amplification chip includes a first region and a second region, where one region is for amplifying light, and the other region is for amplifying and modulating the light. The first region and the second region share a same substrate (10), and are electrically isolated. The first region is close to a light input end of the optical modulation and amplification chip, and the second region is close to a light output end of the optical modulation and amplification chip. A first waveguide (401) of the first region and a second waveguide (402) of the second region are connected in series along a light transmission direction of the optical modulation and amplification chip. An optical confinement factor of a first active layer (301) of the first region is greater than an optical confinement factor of a second active layer (302) of the second region.