Integrated Optical Core Joint Layout for Higher ESD Reliability
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Solution Overview
Problem
The reduction in device size of semiconductor optical devices to improve response rate and reduce price leads to a decrease in electrostatic discharge (ESD) withstand voltage, compromising reliability.
Innovation Solution
A semiconductor integrated optical device with a first high-resistance region formed above protrusion portions between core layers, reducing voltage concentration and enhancing ESD withstand voltage through impurity ion implantation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If device size is reduced to improve response rate and reduce price, then response rate is improved and price is reduced, but ESD withstand voltage decreases and reliability deteriorates
Solution Approach 1:
The patent applies local quality by forming a high-resistance region at a specific location (above the protrusion portion in the joint region) rather than uniformly throughout the device. This localized modification allows the device to maintain small overall dimensions while providing enhanced ESD protection at the critical joint region where voltage concentration occurs, thus resolving the contradiction between small size and ESD withstand voltage.
Solution Approach 2:
The patent changes the electrical resistance parameter locally by forming a high-resistance region through impurity ion implantation in the joint region. This parameter change creates a voltage distribution that prevents concentration at the protrusion portion, thereby improving ESD withstand voltage without increasing device size, resolving the contradiction between device size and reliability.
2Speed
If device size is reduced to improve response rate and reduce price, then response rate is improved and price is reduced, but crystal defects increase and reliability deteriorates
Solution Approach 1:
The patent applies local quality by forming a high-resistance region at a specific location (above the protrusion portion in the joint region) rather than uniformly throughout the device. This localized modification allows the device to maintain small overall dimensions while providing enhanced ESD protection at the critical joint region where voltage concentration occurs, thus resolving the contradiction between small size and ESD withstand voltage.
Solution Approach 2:
The patent applies preliminary anti-action by pre-forming a high-resistance region in the joint region before ESD events occur. This preventive structure counteracts the harmful effect of voltage concentration that would otherwise cause crystal defects, allowing the device to maintain small size without suffering from increased crystal defects.
3Reliability
If high-resistance region is formed by proton implantation to electrically insulate joint portion, then electrical insulation is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by forming a high-resistance region at a specific location (above the protrusion portion in the joint region) rather than uniformly throughout the device. This localized modification allows the device to maintain small overall dimensions while providing enhanced ESD protection at the critical joint region where voltage concentration occurs, thus resolving the contradiction between small size and ESD withstand voltage.
Solution Approach 2:
The patent merges multiple functions into the single high-resistance region structure: it provides electrical insulation between the core layers, protects against ESD by preventing voltage concentration, and maintains optical coupling efficiency. This consolidation achieves multiple reliability improvements without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the reliability of semiconductor optical devices by minimizing crystal deterioration and improving ESD withstand voltage, while maintaining optical coupling efficiency.
Implementation Method 1
A semiconductor integrated optical device with a first high-resistance region formed above protrusion portions between core layers, reducing voltage concentration and enhancing ESD withstand voltage through impurity ion implantation.
Implementation Method 2
a part of a substrate forms a side-wall shape control layer between the two semiconductor multilayer structures through a mass transport phenomenon
Data Source
AI summary
Provided is a semiconductor integrated optical device with high reliability. The semiconductor integrated optical device includes: a first-conductivity type semiconductor layer; first and second core layers placed on the first-conductivity type semiconductor layer; a first protrusion portion of a first conductivity type which extends from the first-conductivity type semiconductor layer in a direction of growth of the first and second core layers, and which is formed between the first core layer and the second core layer to join the first core layer and the second core layer by a butt joint; a second-conductivity type semiconductor layer placed on the first and second core layers; and a first electrode placed on the second-conductivity type semiconductor layer so as to cover a portion above the first core layer. The second-conductivity type semiconductor layer has a first high-resistance region locally formed therein, the first high-resistance region being formed above the first protrusion portion.