1T1P Optical Detection Pixel Unit for Large Array Integration
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Solution Overview
Problem
Existing optical detection circuits face challenges in integrating large arrays due to complex structures and large area occupation, particularly in active optical pixel circuits that require reset and gated transistors, which affect signal-to-noise ratio and are prone to interference.
Innovation Solution
An optical detection pixel unit with a 1T1P structure, comprising a photosensitive element and a detection transistor, where the photosensitive element is connected to a photovoltage terminal and the detection transistor is connected to a detection voltage line, allowing for active photosensitive detection without the need for reset transistors and gated transistors, enabling efficient large array integration while maintaining good anti-noise performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If active optical pixel circuit uses reset transistors and gated transistors to overcome interference and increase signal-to-noise ratio, then anti-noise performance is improved, but device complexity and area occupation increase
Solution Approach 1:
The patent extracts and removes the reset transistor and gated transistor from the optical pixel circuit, retaining only the essential detection transistor. This extraction eliminates the complexity and area occupation caused by unnecessary components while preserving the core detection function through optimized control signal timing.
Solution Approach 2:
The patent segments the control signals into distinct phases (reset phase, integration phase, readout phase) with different voltage levels applied to different electrodes of the detection transistor. This temporal and functional segmentation allows a single transistor to perform multiple roles that previously required separate transistors.
2Measurement precision
If active optical pixel circuit uses reset transistors and gated transistors to overcome interference, then signal-to-noise ratio is increased, but area occupation increases affecting large array integration
Solution Approach 1:
The patent merges the functions of reset, integration, and readout operations into a single detection transistor by applying different voltage combinations to its electrodes across different time phases. This consolidation reduces the number of transistors from three to one, significantly decreasing pixel area occupation and enabling large array integration while maintaining signal-to-noise ratio through phase-separated control.
3Device complexity
If passive optical detection circuit uses charge readout method to simplify structure, then device complexity is reduced, but reading lines must not be interfered otherwise readout result is significantly affected
Solution Approach 1:
The patent employs periodic action by applying reset voltage, integration voltage, and readout voltage to the detection transistor in sequential phases. This time-division multiplexing approach simplifies the circuit structure compared to passive detection while ensuring readout stability through controlled periodic operation that prevents interference and isolates measurement phases from reset phases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for active photosensitive detection with improved noise performance without increasing the pixel structure area, facilitating large array integration and overcoming interference issues, thus enhancing the signal-to-noise ratio and detection accuracy.
Implementation Method 1
the photosensitive element is configured to detect an optical signal
Data Source
AI summary
The present disclosure provides an optical detection pixel unit, an optical detection pixel circuit, an optical detection method and a display device. The optical detection pixel unit comprise a photosensitive element and a detection transistor, wherein the photosensitive element has a first electrode connected with a photovoltage terminal, and a second electrode connected with a gate of the detection transistor; the photosensitive element is configured to detect an optical signal under the control of the photovoltage terminal; and the detection transistor has a first electrode connected with a detection voltage line, and a second electrode connected with a reading line.