Optical Multi-Die Bridge with Temperature-Stabilized Modulator Bias
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Solution Overview
Problem
Existing electrical interconnects in semiconductor dies consume high power, have pin count limitations, and inefficiently transport data to the edge of the chip, making it difficult for AI computing hardware to meet the demands of artificial intelligence applications.
Innovation Solution
Implementing optical multi-die interconnect bridges (OMIBs) with temperature-stabilized modulators that bridge semiconductor dies, allowing photonic data transmission directly to the central region of the die, reducing power consumption and latency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If electrical interconnects are used to transport data in semiconductor dies, then data transmission can be achieved, but power consumption is high and pin count is limited
Solution Approach 1:
The patent replaces electrical interconnects with optical interconnects using photonic integrated circuits. Light-based transmission substitutes for electrical signal transmission, enabling data transport without the pin count limitations and reduced power consumption associated with traditional electrical interconnects
Solution Approach 2:
The patent introduces photonic integrated circuits as intermediary components that convert electrical signals to optical signals for transmission. This intermediary optical transmission medium enables data transport between semiconductor dies without requiring direct electrical pin connections, thereby reducing pin count requirements and power consumption
2Productivity
If electrical interconnects transport data to the edge of the chip, then data transmission is achieved, but transport efficiency is low and latency is high
Solution Approach 1:
The patent substitutes optical transmission for electrical transmission to move data directly between central regions of semiconductor dies. This optical interconnect system eliminates the need for data to travel to chip edges, significantly reducing transmission distance, latency, and improving overall data transport efficiency
Solution Approach 2:
The patent enables three-dimensional stacking of semiconductor dies with optical interconnects bridging multiple layers. This vertical dimensionality allows data transport between central regions of stacked dies without lateral traversal to chip edges, reducing latency and improving productivity through direct vertical optical paths
3Temperature
If temperature-stabilized modulators are implemented in OMIBs, then operating temperature range is extended, but device complexity increases
Solution Approach 1:
The patent implements self-compensating modulator designs that automatically adjust for temperature variations without external control systems. The modulators are designed with inherent temperature compensation mechanisms that maintain performance across extended temperature ranges, reducing the complexity of external temperature stabilization hardware
Solution Approach 2:
The patent uses modulator designs where key parameters such as bias voltage or operating wavelength are dynamically adjusted based on temperature conditions. These parameter changes compensate for temperature-induced performance degradation, extending the operating temperature range while minimizing the need for complex active temperature control systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
OMIBs provide faster and more efficient data transport to the compute elements, reducing electrical pipeline stages and utilizing less power, thereby enabling complex AI systems to operate effectively.
Implementation Method 1
a modulator with a first modulator input; and a PIC interconnect region located within two millimeters (2 mm) from the modulator
Implementation Method 2
The modulator is configured to receive a temperature-dependent bias voltage. The temperature dependence of the temperature-dependent bias voltage inversely matches the temperature dependence of the modulator over an extended temperature range.
Data Source
AI summary
A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.