Semiconductor Optical Element Etching With Asymmetric Mask Openings
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Solution Overview
Problem
The existing methods for manufacturing semiconductor optical elements often result in residue formation during etching, which can hinder subsequent processes such as resist application due to anisotropy in etching, leading to obstacles in the manufacturing process.
Innovation Solution
A method involving bonding a III-V compound semiconductor chip to a substrate, forming a mask with an opening that lacks sides perpendicular to a specific direction, allowing etching to proceed more favorably in intersecting directions, thereby reducing residue formation by minimizing exposure of low etching rate surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching is performed on the semiconductor chip, then the second substrate can be removed, but residue formation occurs due to anisotropy in etching
Solution Approach 1:
The patent applies asymmetry by designing the mask opening with specific geometric characteristics - the opening does not have sides perpendicular to the <100> direction, which prevents the formation of low-etching-rate surfaces during anisotropic etching. This asymmetric design ensures uniform etching progression and eliminates residue formation while maintaining effective substrate removal.
2Ease of manufacture
If the mask opening has sides perpendicular to the <100> direction, then the mask structure is simple, but low etching rate surfaces are exposed causing residue
Solution Approach 1:
The patent deliberately introduces asymmetry in the mask opening design by specifying that the opening lacks sides perpendicular to the <100> direction. This asymmetric configuration prevents the exposure of low-etching-rate crystal surfaces during anisotropic etching, thereby achieving uniform etching throughout the substrate removal process without compromising manufacturing simplicity.
3Productivity
If the etching progresses uniformly in all directions, then complete substrate removal is achieved, but residue forms on low etching rate surfaces
Solution Approach 1:
The patent resolves the contradiction between complete substrate removal and residue prevention by applying asymmetry to the mask opening geometry. The opening is designed without sides perpendicular to the <100> direction, which ensures that etching progresses uniformly in all directions without exposing low-etching-rate surfaces, thereby achieving both complete substrate removal and residue-free surfaces simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces residue occurrence during etching, facilitating smoother processing and enabling the formation of semiconductor optical elements without residual issues.
Implementation Method 1
The etching in the removing the second substrate is more likely to progress in a second direction intersecting with the first direction than in the first direction
Data Source
AI summary
A method of manufacturing a semiconductor optical element including a chip including a III-V compound semiconductor and a first substrate. The chip includes a second substrate and a semiconductor layer stacked on the second substrate. The method includes, bonding the semiconductor layer of the chip to the first substrate, forming a mask on the chip bonded to the first substrate, and removing the second substrate by performing etching on the chip provided with the mask. The mask has an opening. The second substrate is exposed from the opening. The opening does not have a side perpendicular to a first direction. The etching in the removing the second substrate is more likely to progress in a second direction intersecting with the first direction than in the first direction.