Optical Filter Stack for Accurate Hyperspectral Sensing
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Solution Overview
Problem
Hyperspectral optical sensing devices face limitations in accuracy due to complexity and vulnerability from moving parts, and require high mask counts and tight dimension control in manufacturing.
Innovation Solution
A hyperspectral optical sensing device integrates dielectric filter elements with a photodetector array on a single semiconductor chip, using a spacer stack and dielectric mirrors to create Fabry-Pérot etalons that block unwanted light, eliminating the need for movable parts and reducing manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If existing hyperspectral optical sensing approaches are used, then spectral detection capability is achieved, but accuracy is limited and device complexity increases due to moving parts and signal processing requirements
Solution Approach 1:
The patent replaces mechanical moving parts (such as tunable filters or scanning mechanisms) with a static photodetector array where each pixel is equipped with a fixed wavelength-selective filter. This substitution eliminates mechanical complexity while maintaining spectral detection capability, directly resolving the contradiction between measurement precision and device complexity.
Solution Approach 2:
The patent segments the spectral detection function across multiple photodetector pixels, with each pixel dedicated to detecting a specific wavelength band through its associated filter. This segmentation allows parallel spectral measurement without requiring mechanical scanning or complex signal processing to unfold temporal spectral information, thereby improving accuracy while reducing device complexity.
2Manufacturing precision
If semiconductor-based hyperspectral sensing devices are manufactured with high precision, then manufacturing accuracy is improved, but mask count increases and deep UV capability is required
Solution Approach 1:
The patent changes the manufacturing approach by using standard photolithography processes with relaxed dimension tolerances to define the filter structures, rather than requiring deep UV lithography with tight critical dimension control. The filter design parameters (layer thicknesses, materials) are optimized to achieve the desired spectral selectivity without demanding extreme manufacturing precision, thus improving ease of manufacture while maintaining manufacturing accuracy.
Solution Approach 2:
The patent employs a lift-off technique using sacrificial spacer layers that are deposited and then removed to define the filter cavity structures. This approach uses temporary, easily fabricated spacer layers (deposited by standard PECVD or spin-coating) rather than requiring precise etching masks, reducing the need for high-end lithography equipment and simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances accuracy and reduces manufacturing complexity by integrating all-dielectric filter elements with precise control over spacer thicknesses, eliminating the need for deep UV lithography and tight dimension control, while preventing unwanted light from reaching the photodetectors.
Implementation Method 1
Each filter element comprises corresponding sections of a lower and an upper dielectric mirror and a spacer element arranged between the dielectric mirrors... The upper and the lower dielectric mirror together with the primary spacer layer and the first spacer layer form at least two filter elements
Implementation Method 2
The filter elements are arranged to cover respective photodetectors of the photodetector array. Each filter element comprises corresponding sections of a lower and an upper dielectric mirror
Implementation Method 3
A band-pass filter and a decoupling layer are arranged below the lower dielectric mirror to cut off unwanted portions of the pass-bands of the individual filter elements
Implementation Method 4
the sensing device may detect incident light and generate information about a distribution of the light intensity corresponding to several narrow spectral bands
Data Source
AI summary
An optical sensing device comprises a substrate (S1) carrying a first and a second photodetector (S1, S2) and a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises a band-pass filter (BP), a decoupling layer (DL) arranged on the band-pass filter (BP) and a lower dielectric mirror (LM) arranged on the decoupling layer (DL). The filter stack comprises a spacer stack with a primary spacer layer(SP) arranged on the lower dielectric mirror (LM), comprising a first dielectric material and covering the photodetector array. The spacer stack comprises a first spacer layer (S1) comprising the first dielectric material, wherein a first segment of the first spacer layer (S1) is arranged on the primary spacer layer (SP) and covers the second photodetector (P2) but not the first photodetector (P1). The filter stack comprises an upper dielectric mirror (UM) arranged on the spacer stack.