Optical Interface Opening With Homogeneous Dielectric Gap Fill

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Solution Overview

Problem

Existing optical and electrical signal integration in devices experiences high insertion loss due to the use of heterogeneous dielectric materials in the optical path, which disrupts signal transmission efficiency.

Innovation Solution

The formation of a homogeneous optical path using a single, light-transparent dielectric material such as silicon oxide or silicon oxynitride, replacing heterogeneous dielectric layers to minimize insertion loss by ensuring all materials along the optical path have minimal atomic percentage differences, and the removal of high-loss materials through etching and refilling processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If heterogeneous dielectric materials are used in the optical path, then device functionality is achieved, but insertion loss increases

Engineering Contradiction:
Improveinsertion lossVSAvoidmaterial heterogeneity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent applies homogeneity by replacing heterogeneous dielectric materials (such as silicon nitride, silicon oxynitride, and silicon oxide layers) with a uniform low-k dielectric material throughout the optical path. This ensures consistent optical properties and minimizes insertion loss by eliminating material interfaces that cause signal disruption.

Inventive Principle:
Principle #33Homogeneity

Solution Approach 2:

The patent changes the dielectric material parameter from heterogeneous high-k materials to homogeneous low-k material with specific atomic percentage characteristics. This parameter change reduces the refractive index variations and material-induced interference along the optical path, thereby reducing insertion loss.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If heterogeneous dielectric layers are used, then structural functionality is achieved, but signal transmission efficiency decreases

Engineering Contradiction:
Improvesignal transmission efficiencyVSAvoiddielectric layer structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent merges multiple heterogeneous dielectric layers into a single homogeneous low-k dielectric material structure. By combining the functions of multiple material layers into one uniform material, the patent simplifies the dielectric layer structure while maintaining structural functionality and improving signal transmission efficiency.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent uses homogeneous low-k dielectric material throughout the optical path, ensuring uniform signal transmission properties. This homogeneity eliminates the signal disruption caused by interfaces between different dielectric materials, thereby enhancing overall signal transmission efficiency.

Inventive Principle:
Principle #33Homogeneity

3Object-affected harmful factors

If multiple dielectric materials are used in the optical path, then device functionality is maintained, but material-induced interference increases

Engineering Contradiction:
Improvematerial-induced interferenceVSAvoidmaterial composition
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent eliminates material-induced interference by using a homogeneous low-k dielectric material throughout the optical path. This single-material approach removes the interfaces and compositional variations that cause signal interference, while the low-k properties of the material provide the necessary electrical insulation functionality.

Inventive Principle:
Principle #33Homogeneity

Solution Approach 2:

The patent changes the material composition parameter to use low-k dielectric material with specific atomic percentages (such as carbon content between 5-20 at%). This parameter change reduces the material's optical density and refractive index, thereby minimizing material-induced interference while maintaining device functionality.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20260003122A1Gap-fill and bond film interface opening in optical applications
Publication Date: 2026.01.01 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20260003122A1 patent drawing
  • US20260003122A1 patent drawing
  • US20260003122A1 patent drawing

AI summary

A method includes etching a plurality of dielectric layers in a photonic die to form an opening. The opening overlaps a grating coupler, wherein the photonic die includes a first top surface at a first level. The method further includes forming a first dielectric region in the opening, attaching an electronic die to the photonic die, wherein the photonic die comprises a second top surface at a second level, and forming a gap-fill region to encircle the electronic die. The gap-fill region includes a second dielectric region that includes a first dielectric material, and the first dielectric material extends from the second level to the first level. A supporting substrate is bonded over the gap-fill region and the electronic die, wherein the supporting substrate includes a micro lens.