Optical Semiconductor Heater Insulation Stress Relief

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Solution Overview

Problem

The reliability of heaters in optical semiconductor devices is compromised due to stress and heat dissipation issues, affecting the accuracy of temperature control, which is crucial for refractive index adjustment and optical performance.

Innovation Solution

The optical semiconductor device incorporates a layered structure with a thicker second insulating film under the electrode to reduce stress on the heater, enhancing its reliability and heat dissipation efficiency, while maintaining the thickness of the first insulating film to protect the heater.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a heater is used for temperature control, then temperature control function is achieved, but heater degradation occurs due to stress and heat dissipation issues

Engineering Contradiction:
Improveheater reliabilityVSAvoidstress on heater
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies different thicknesses of insulating films to different regions: a first insulating film with a certain thickness is formed on the optical waveguide, and a second insulating film with a greater thickness is formed on the heater. This local differentiation allows the heater region to have enhanced stress resistance while maintaining overall device functionality.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses a composite insulating film structure consisting of two different insulating films with different thicknesses. The first insulating film (thinner) and second insulating film (thicker) are combined to create a multi-layered protection system that addresses both stress resistance and heat dissipation requirements.

Inventive Principle:
Principle #40Composite materials

2Reliability

If insulating film thickness is increased to protect heater, then stress resistance improves, but heat dissipation efficiency may be reduced

Engineering Contradiction:
Improveheater protectionVSAvoidheat dissipation efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent strategically places a thicker second insulating film only on the heater region where stress resistance is most critical, while keeping the first insulating film thinner in other areas. This localized approach provides enhanced protection where needed without unnecessarily compromising heat dissipation in regions where it is less critical.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent applies excessive thickness of the second insulating film specifically on the heater region beyond what would be uniformly applied, creating a localized stress-resistant zone. This partial excessive action targets the critical stress area without excessive insulation elsewhere that would harm overall heat dissipation.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses the degradation of the heater, improving the reliability and optical performance by reducing stress and optimizing heat dissipation, thereby maintaining precise temperature control for refractive index adjustment.

Implementation Method 1

a heater provided on the optical waveguide, the first insulating film disposed therebetween

Methodology Applied
Scientific EffectResistive heating: Joule Heating

Implementation Method 2

a thickness of the second insulating film covered by the electrode is greater than thickness of the first insulating film

Methodology Applied
Scientific EffectStress relaxation: Stress Relaxation

Data Source

PatentUS9985413B2Optical semiconductor device and method of fabricating the same
Publication Date: 2018.05.29 SUMITOMO ELECTRIC DEVICE INNOVATIONS
  • US9985413B2 patent drawing
  • US9985413B2 patent drawing
  • US9985413B2 patent drawing

AI summary

An optical semiconductor device comprises: a first insulating film provided on a semiconductor layer; a heater provided on the first insulating film; a second insulating film provided on the heater; and an electrode provided on the heater. The electrode extends on the second insulating film; the electrode is in contact with the heater; the second insulating film includes a first region on which the electrode is located; and a thickness of the first region of the second insulating film is greater than that of the first insulating film.