Optical Semiconductor Layer Structure for Ripple-Free Active Layer Inspection
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Solution Overview
Problem
The characteristics of the active layer in optical semiconductor devices, as measured during intermediate inspection, often differ from the actual characteristics in the finished product due to superimposed reflected light components causing ripples in the emission spectrum, leading to misjudgment and increased manufacturing costs.
Innovation Solution
Incorporating an electric field distribution adjusting structure with alternating layers of different refractive indices and a relaxation layer at specific positions to reduce ripples in the reflection spectrum, allowing for accurate intermediate inspection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single layer structure with large layer thickness is used for the electric field distribution adjusting layer, then the electric field distribution can be adjusted, but crystal growth defects increase
Solution Approach 1:
The electric field distribution adjusting layer is divided into multiple sub-layers with different thicknesses. Specifically, it includes a first adjusting layer and a second adjusting layer with different thicknesses, allowing the electric field distribution to be adjusted through the combined effect of multiple layers rather than requiring a single thick layer, thus avoiding crystal growth defects.
Solution Approach 2:
Different portions of the electric field distribution adjusting layer have different thicknesses to create localized variations in electric field distribution. The first adjusting layer has a first thickness and the second adjusting layer has a second thickness different from the first, enabling precise local control of the electric field distribution to optimize both adjustment capability and crystal growth quality.
2Manufacturing precision
If a layered structure with multiple layers is used for the electric field distribution adjusting layer, then crystal growth defects are reduced, but the inspection accuracy during intermediate process decreases due to ripples in emission spectrum
Solution Approach 1:
The thickness parameters of the electric field distribution adjusting layer are specifically optimized. By setting the first thickness and second thickness within certain ranges and maintaining a specific relationship between them, the structure reduces ripples in the emission spectrum during intermediate inspection, thereby improving measurement accuracy while maintaining the multi-layer configuration benefits for crystal growth.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables more precise characterization of the active layer, reducing manufacturing yield loss and costs by ensuring accurate inspection and facilitating better crystal growth.
Implementation Method 1
a layer having a high refractive index is provided in an n-type cladding layer to bias an electric field distribution of laser light propagating through the active layer toward the n-type cladding layer
Implementation Method 2
superimposed reflected light components causing ripples in the emission spectrum
Data Source
AI summary
An optical semiconductor device includes: an n-type cladding layer; a p-type cladding layer; and an active layer interposed between the n-type cladding layer and the p-type cladding layer. The n-type cladding layer includes a base layer, and an electric field distribution adjusting structure configured by alternately and periodically layering multiple first layers and multiple second layers, the multiple first layers having same refractive index as the base layer, the multiple second layers having a higher refractive index than a refractive index of the first layers. The multiple second layers include a relaxation layer located at a position near at least one end from a center in a layering direction of the first layers and the second layers of the electric field distribution adjusting structure, the relaxation layer having a smaller thickness than a thickness of the other second layers.