Optical Memory Access Switch for Configurable Signal Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
MicroLEDs face challenges in achieving high efficiency and low energy consumption due to sidewall defects during manufacturing, which impact modulation speed and energy efficiency, particularly as they are scaled down for high-bandwidth optical interconnects in data centers.
Innovation Solution
Implementing magnesium (Mg) passivation on the sidewalls of MicroLEDs to neutralize surface states and create a depletion region, reducing non-radiative recombination and enhancing carrier lifetime, combined with a microcavity structure for improved light confinement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MicroLEDs are scaled down for high-bandwidth optical interconnects, then data transfer rate is improved, but manufacturing precision deteriorates due to sidewall defects
Solution Approach 1:
The patent converts the harmful sidewall defects into a beneficial feature by applying magnesium passivation that creates a depletion region. The sidewall defects, which normally cause non-radiative recombination, are transformed into a controlled depletion region that actually enhances carrier lifetime and reduces energy loss, turning the manufacturing challenge into a performance advantage
Solution Approach 2:
The patent changes the physical and chemical parameters of the sidewall surface by applying magnesium passivation. This alters the surface states and creates a depletion region with specific electrical characteristics, transforming the sidewall from a defect source to a controlled functional region that improves overall device performance at scaled dimensions
2Productivity
If MicroLEDs are scaled down for high-bandwidth optical interconnects, then bandwidth is improved, but energy efficiency deteriorates due to increased non-radiative recombination
Solution Approach 1:
The patent converts the harmful non-radiative recombination at sidewalls into a beneficial depletion region through magnesium passivation. This depletion region reduces carrier leakage and actually decreases energy loss, transforming the scaling penalty into an energy efficiency improvement while maintaining high bandwidth capability
3Volume of moving object
If MicroLEDs are scaled down, then device size is reduced for higher density, but modulation speed deteriorates due to sidewall defects
Solution Approach 1:
The patent changes the electrical parameters at the sidewall interface by applying magnesium passivation, creating a depletion region that improves carrier dynamics. This parameter change compensates for the size reduction effects, maintaining fast modulation speed despite the smaller device dimensions by optimizing the carrier injection and recombination characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Mg passivation and microcavity structure enable MicroLEDs to maintain high efficiency and modulation speed even at smaller sizes, achieving low energy consumption per bit (0.3 pJ/bit) and high data transfer rates (>2 Tb/s) suitable for advanced optical communication applications.
Implementation Method 1
Implementing magnesium (Mg) passivation on the sidewalls of MicroLEDs to neutralize surface states and create a depletion region, reducing non-radiative recombination
Implementation Method 2
magnesium (Mg) passivation on the sidewalls of MicroLEDs to neutralize surface states and create a depletion region
Implementation Method 3
combined with a microcavity structure for improved light confinement
Implementation Method 4
microcavity structure for improved light confinement
Implementation Method 5
MicroLEDs to maintain high efficiency and modulation speed even at smaller sizes, achieving low energy consumption per bit (0.3 pJ/bit) and high data transfer rates (>2 Tb/s) suitable for advanced optical communication applications
Data Source
AI summary
Examples described herein relate to a first circuitry, wherein the first circuitry comprises one or more of: a first memory, a first processor, or a first accelerator; a second circuitry, wherein the first circuitry and the second circuitry are communicatively coupled by optical interfaces and wherein the second circuitry comprises one or more of: a second memory, a second processor, or a second accelerator; and a switch configured to provide optical and/or electrical signal isolation between the first and second circuitries based on a configuration. In some examples, the configuration is to specify whether optical, electrical, or optical and electrical communications are permitted and an access level.


