Optical Memory Isolation via Dynamic Resource Reallocation

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Solution Overview

Problem

MicroLEDs face challenges in achieving high efficiency and low energy consumption due to sidewall defects during manufacturing, which impact light emission and increase energy consumption per bit, especially as they are scaled down for high-bandwidth optical interconnects in data centers.

Innovation Solution

Implementing magnesium (Mg) passivation on the sidewalls of MicroLEDs through tilted ion implantation, combined with a dielectric layer, to neutralize surface states and create a depletion region, reducing non-radiative recombination and enhancing carrier lifetime.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If MicroLEDs are scaled down for high-bandwidth optical interconnects, then bandwidth and integration density are improved, but sidewall defects increase causing higher energy consumption per bit

Engineering Contradiction:
ImprovebandwidthVSAvoidenergy consumption per bit
Core Design Contradiction:
ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent applies magnesium passivation specifically to the sidewalls of MicroLEDs through tilted ion implantation. This localized treatment addresses the sidewall defects that cause non-radiative recombination without affecting the overall device structure. The dielectric layer is also applied locally to the sidewalls to complete the passivation effect, reducing energy loss at the critical sidewall regions while maintaining the scaled-down dimensions needed for high bandwidth.

Inventive Principle:
Principle #3Local quality

2Reliability

If Magnesium passivation is applied through tilted ion implantation, then non-radiative recombination is reduced and carrier lifetime is enhanced, but manufacturing process complexity increases

Engineering Contradiction:
Improvecarrier lifetimeVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The magnesium passivation is applied during the manufacturing process through tilted ion implantation before final device operation. This preliminary action prevents sidewall defects from causing non-radiative recombination in the first place, rather than attempting to correct them afterward. The process is integrated into the existing MicroLED fabrication flow, adding the passivation step at the appropriate stage to ensure reliable device performance without requiring complex post-processing.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The Mg passivation technique maintains high efficiency and modulation speed while reducing energy consumption per bit from 1 pJ/bit to 0.3 pJ/bit, enabling scalable and cost-effective high-speed optical communication.

Implementation Method 1

Implementing magnesium (Mg) passivation on the sidewalls of MicroLEDs through tilted ion implantation

Methodology Applied
Scientific EffectIon implantation: Ion Implantation

Implementation Method 2

neutralize surface states and create a depletion region, reducing non-radiative recombination

Methodology Applied
Scientific EffectSurface passivation: Adsorption

Data Source

PatentUS20250350373A1Reallocation of resources for isolating optical communications
Publication Date: 2025.11.13 INTEL CORP
  • US20250350373A1 patent drawing
  • US20250350373A1 patent drawing
  • US20250350373A1 patent drawing

AI summary

Examples described herein relate to circuitry coupled to a memory configured to: report telemetry data indicative of access to a first region of the memory; and based on a first command, selectively adjust resources of the memory allocated to communications between a first process and a second process. In some examples, the first region of the memory is accessible to the first process and the second process via optical interconnects. In some examples, the resources of the memory comprise one or more of: a number of addresses in a memory region, a set of memory addresses, or memory bandwidth.