Optical Modulation Device with Recessed Waveguide and Inorganic MOS Stacks
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Solution Overview
Problem
Plasmonic and Silicon Organic Hybrid optical modulation devices suffer from reliability and longevity issues while striving for compactness and high-speed performance.
Innovation Solution
An optical modulation device featuring a substrate with a recessed optical waveguide, stacked MOS assemblies separated by a gap, and tapered extensions, utilizing inorganic semi-conductive materials and insulating coatings to enhance reliability and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If organic materials are used in plasmonic and silicon organic hybrid optical modulation devices, then compactness and high-speed performance are achieved, but reliability and longevity deteriorate
Solution Approach 1:
The patent employs a hybrid structure combining inorganic materials (metal electrodes, dielectric layers) with organic materials (semiconductor core layer). This composite approach allows the device to achieve compact dimensions and high-speed modulation performance while the inorganic components provide enhanced stability and longevity, resolving the contradiction between speed and reliability
Solution Approach 2:
The patent applies different material properties to different regions of the device: organic semiconductor materials are used specifically in the active modulation region where high-speed performance is critical, while inorganic materials are used in regions requiring structural stability and longevity. This localized material selection optimizes both speed and reliability
2Area of stationary object
If device size is reduced to achieve compactness, then footprint is minimized, but manufacturing precision and assembly difficulty increase
Solution Approach 1:
The patent transitions from planar two-dimensional device layouts to three-dimensional vertically-stacked architectures. Multiple functional layers (electrodes, dielectric layers, semiconductor core) are stacked vertically, allowing compact footprint while maintaining sufficient lateral dimensions for manufacturable precision and assembly
3Productivity
If bandwidth is increased to meet high-speed requirements, then data transmission capacity improves, but insertion loss increases
Solution Approach 1:
The patent optimizes multiple physical parameters including layer thicknesses, material compositions, and geometric dimensions to achieve a balance between bandwidth and insertion loss. By carefully tuning these parameters, the device achieves high data transmission capacity while minimizing optical energy loss through the modulation structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high bandwidth and low insertion loss with improved reliability and longevity, maintaining compactness and high-speed performance without compromising electrical bandwidth.
Implementation Method 1
an inorganic semi-conductive material film disposed atop the cathode layer
Implementation Method 2
an optical waveguide configured for guiding an optical signal therein
Data Source
AI summary
An optical modulation device including a substrate defining a recess on a top surface thereof, an optical waveguide configured for guiding an optical signal therein, the optical waveguide being disposed in the recess, a first stack assembly disposed on the top surface of the substrate and at least partially above the optical waveguide and a second stack assembly disposed on the top surface of the substrate and at least partially above the optical waveguide is disclosed. The first and second stack assemblies extend parallel to each other on an active portion of the optical waveguide, the first and second stack assemblies being separated by a gap, each of the first and second stack assemblies including a cathode layer, an inorganic semi-conductive material film disposed atop the cathode layer, an insulating coating disposed atop the inorganic semi-conductive material film and an anode layer disposed on the insulating coating.