Optical Modulator Contact Layer Segmentation Without Isolation Trenches
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Solution Overview
Problem
The existing optical semiconductor devices require a complex step of forming an isolation trench between the semiconductor laser and the optical modulator, increasing the number of manufacturing steps and hindering mass production.
Innovation Solution
The optical semiconductor device features a semiconductor substrate with an active layer, an optical modulation layer, a clad layer, and a contact layer, where the optical modulation layer has a first protrusion and the clad layer has a second protrusion, allowing the contact layer to be divided in the optical axis direction without additional manufacturing steps through selective growth and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an isolation trench is formed between the semiconductor laser and the optical modulator to divide the contact layer, then current flow between the two devices is suppressed, but the number of manufacturing steps increases
Solution Approach 1:
The contact layer is divided into separate regions for the semiconductor laser and optical modulator by forming protrusions that physically separate the contact areas. This segmentation prevents current from flowing between the two devices while maintaining a simplified manufacturing process that does not require additional isolation trench formation steps.
Solution Approach 2:
Protrusions are formed in the contact layer and clad layer during the epitaxial growth process itself, before subsequent manufacturing steps. This preliminary formation of dividing structures eliminates the need for later isolation trench formation and filling steps, reducing the total number of manufacturing steps while ensuring proper current isolation.
2Reliability
If an isolation trench is formed and filled to divide the contact layer, then current flow between the semiconductor laser and optical modulator is suppressed, but mass production efficiency is reduced
Solution Approach 1:
The formation of the dividing protrusions in the contact layer is merged with the epitaxial growth process of the semiconductor layers. By combining these functions into a single growth step, the number of separate manufacturing operations is reduced, thereby improving mass production efficiency while still achieving the required current isolation between devices.
Solution Approach 2:
The contact layer division structure is created during the initial epitaxial growth phase, before subsequent processing steps. This preliminary action eliminates the need for separate isolation trench formation and filling operations, streamlining the manufacturing process for mass production while ensuring reliable current isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the division of the contact layer without increasing the number of manufacturing steps, facilitating efficient mass production of optical semiconductor devices.
Implementation Method 1
an optical modulation layer provided on the semiconductor substrate, the optical modulation layer being adjacent to the active layer, and configured to modulate the laser beam
Implementation Method 2
a low-resistance contact layer as a p-type semiconductor layer is formed on the semiconductor laser and the optical modulator by using an epitaxial growth method
Data Source
AI summary
A semiconductor device includes a semiconductor substrate; an active layer provided on the semiconductor substrate, and configured to generate a laser beam; an optical modulation layer provided on the semiconductor substrate, the optical modulation layer being adjacent to the active layer, and configured to modulate the laser beam; a clad layer provided on the active layer and the optical modulation layer; and a contact layer provided on the clad layer, wherein the optical modulation layer has a first protrusion provided at an end part closer to the active layer, on an upper surface of the optical modulation layer, the clad layer has a second protrusion provided on an upper surface of the clad layer vertically above the first protrusion, and the contact layer is divided by the second protrusion in an optical axis direction of the laser beam.