Optical Modulator Doping Structure for Faster Signal Modulation
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Solution Overview
Problem
As the semiconductor industry advances into advanced technology process nodes, issues of current leakage and breakdown voltage of capacitors arise, and there is an obstacle to improved modulation speeds in optical data transmission devices.
Innovation Solution
The development of an optical modulator with a specific optical modulating structure and doping regions formed through sequential implantation processes, including multiple doping regions with varying dopant types and concentrations, reduces electrical resistance and enhances modulation speeds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If advanced technology process nodes are used to achieve greater device density, then device density is improved, but current leakage and breakdown voltage issues arise
Solution Approach 1:
The patent segments the semiconductor structure by introducing a dedicated tunnel barrier layer separate from the capacitor structure, and divides the capacitor into distinct regions (first capacitor region with first dielectric layer, second capacitor region with second dielectric layer). This segmentation allows independent optimization of each component's electrical properties, enabling high device density while maintaining reliable voltage blocking and preventing current leakage through proper material selection and interface control in each segmented region.
Solution Approach 2:
The patent applies local quality by using different dielectric materials in different capacitor regions - a first dielectric layer in the first capacitor region and a second dielectric layer in the second capacitor region. Each region is optimized with materials having specific electrical characteristics appropriate for its function, allowing the structure to achieve both high density and reliable electrical performance locally in each region while maintaining overall system reliability.
2Speed
If smaller product scales and greater modulation speeds are pursued, then modulation speed is improved, but obstacles are encountered in advanced technology process nodes
Solution Approach 1:
The patent merges the formation of tunnel barriers for the optical modulator with the capacitor structure fabrication process. The tunnel barrier layer is formed as part of the same deposition sequence that creates the capacitor dielectric layers, combining multiple functions into a single integrated manufacturing step. This merging reduces process complexity and enables high modulation speeds by eliminating separate fabrication steps while maintaining precise control over barrier thickness and material properties.
Solution Approach 2:
The patent implements universality by designing a capacitor structure that serves multiple functions: it provides electrical storage functionality, forms tunnel barriers for the optical modulator, and enables precise control over voltage application for high-speed modulation. The same dielectric layers and deposition processes that create the capacitor also establish the tunnel barriers, allowing the structure to perform both capacitive and barrier functions simultaneously, thereby achieving high modulation speeds without increasing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optical modulator achieves lower electrical resistance and improved modulation speeds by optimizing the doping regions, providing a pathway for electrical signals with reduced resistance and maintaining effective optical signal transmission.
Implementation Method 1
a first doping region is formed in an exposed portion of the lower member and at least a portion of an exposed sidewall of the first protrusion
Data Source
AI summary
The present disclosure provides an optical modulating structure. The optical modulating structure includes a lower member extending along an insulating layer, a first protrusion over the lower member, and a second protrusion over the lower member and separated from the first protrusion. A first mask layer is formed over the optical modulating structure, wherein the first mask layer covers the second protrusion and a first portion of the lower member between the first protrusion and the second protrusion. A first doping region is formed in an exposed portion of the lower member and at least a portion of an exposed sidewall of the first protrusion. A dielectric layer is formed between the first protrusion and the second protrusion. A method for manufacturing the optical modulating structure is also provided.