Optical Modulator HF Line Inductance for Capacitance Cancellation

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Solution Overview

Problem

The frequency response characteristics and reflection characteristics of high-speed optical modulators are limited by the depletion layer capacitance of the light absorption part, hindering the realization of optical modulators with higher speed and wider bandwidth.

Innovation Solution

An optical semiconductor chip is designed with a high frequency line connecting the electrode pad and the modulation electrode, providing inductance in series with the depletion layer capacitance of the optical waveguide, thereby canceling out the capacitive impedance and improving frequency response and reflection characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the optical modulator uses a light absorption layer with depletion layer capacitance, then the electro absorption effect enables optical modulation, but the depletion layer capacitance limits the frequency response and bandwidth

Engineering Contradiction:
Improvemodulation speedVSAvoidfrequency response characteristics
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

An inductor is introduced as an intermediary element connected in series between the electrode pad and the light absorption layer. This inductor acts as a mediator that compensates for the capacitive effect of the depletion layer, thereby improving frequency response characteristics and enabling higher modulation speeds without sacrificing modulation effectiveness

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of operation

If the electrode pad is made large (40-100 μm square) for proper electrical connection, then the electrical connection is improved, but the parasitic capacitance increases limiting high frequency performance

Engineering Contradiction:
Improveelectrical connectionVSAvoidfrequency response
Core Design Contradiction:
Ease of operationVSSpeed

Solution Approach 1:

The inductor serves as an intermediary that compensates for the parasitic capacitance inherent in the electrode pad structure. By introducing this inductive element in series, the system can maintain larger electrode pads for good electrical connection while the inductor counteracts the capacitive effect, preserving high frequency response characteristics

Inventive Principle:
Principle #24Intermediary (Mediator)

3Speed

If the optical modulator is designed for high speed operation, then the modulation bandwidth increases, but the reflection characteristics deteriorate

Engineering Contradiction:
Improvemodulation bandwidthVSAvoidreflection characteristics
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The inductor is designed to provide preliminary anti-action against the capacitive impedance of the depletion layer. By pre-compensating for the capacitive effect through the series inductor, the system maintains good reflection characteristics even at high modulation bandwidths, preventing the deterioration that would otherwise occur

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The implementation of the high frequency line in the optical semiconductor chip enhances the frequency response characteristics and reflection characteristics, achieving a higher speed and wider bandwidth for the optical modulator.

Implementation Method 1

a high frequency line connecting the electrode pad and the modulation electrode and providing inductance in series with respect to a depletion layer capacitance of the optical waveguide

Methodology Applied
Scientific EffectInductance: Inductor

Implementation Method 2

An electro absorption (EA) optical modulator using an electro absorption effect of a semiconductor is one typical high-speed optical modulator

Methodology Applied
Scientific EffectElectro absorption effect: Electro-Optic Effects

Data Source

PatentUS12341315B2Optical semiconductor chip
Publication Date: 2025.06.24 NIPPON TELEGRAPH & TELEPHONE CORP
  • US12341315B2 patent drawing
  • US12341315B2 patent drawing
  • US12341315B2 patent drawing

AI summary

An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.