Optical Detection Module Barrier Layout for X-Ray Shielding Stability
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Solution Overview
Problem
Dynamic flat panel detectors face issues of low detection precision and high failure rates due to X-rays affecting the active layer of thin film transistors, as existing designs fail to effectively block X-rays and maintain stable carrier transport characteristics.
Innovation Solution
An optical detection module is designed with a switch transistor and a photosensitive device, featuring a barrier and insulation portion made of conductive metal oxides, where the barrier overlaps the active layer to block X-rays, and the insulation portion is formed by oxidizing metal material between the output electrode and the barrier, ensuring electrical insulation and improved blocking efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the barrier is positioned to overlap the active layer to block X-rays, then X-ray blocking efficiency is improved, but electrical insulation between the barrier and output electrode deteriorates
Solution Approach 1:
An insulation portion is introduced as an intermediary element between the barrier and the output electrode. This insulation portion is formed by oxidizing metal material and serves as a mediator that provides electrical insulation while allowing the barrier to maintain its X-ray blocking function by overlapping the active layer. The insulation portion resolves the contradiction by decoupling the spatial positioning requirement for X-ray blocking from the electrical insulation requirement.
2Reliability
If metal material is oxidized to form insulation portion, then electrical insulation is improved, but manufacturing process complexity increases
Solution Approach 1:
The formation of the insulation portion is merged with the existing metal material deposition process. The metal material layer is deposited to form both the output electrode and the barrier, and then selectively oxidized to create the insulation portion. This merging approach integrates the insulation formation into the standard metal layer processing workflow, minimizing additional process complexity while achieving reliable electrical insulation.
3Object-affected harmful factors
If the barrier completely overlaps the active layer, then X-ray blocking is improved, but impact on carrier transport characteristics increases
Solution Approach 1:
The barrier is designed with local quality differentiation through the insulation portion. The barrier maintains its overlapping position with the active layer for X-ray blocking, but the insulation portion is strategically positioned to provide electrical insulation only in specific regions. This local quality approach allows the barrier to block X-rays effectively while minimizing its electrical impact on the active layer, preserving carrier transport characteristics in critical areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the stability and detection accuracy of dynamic DR devices by effectively blocking X-rays and maintaining a stable potential of the barrier, reducing the impact on the active layer and improving the overall X-ray detection process.
Implementation Method 1
a barrier (10b) ... wherein an orthographic projection of the barrier (10b) on the base substrate (1) at least partially overlaps an orthographic projection of the active layer (4)
Implementation Method 2
an insulation portion (10c) on the same layer as the output electrode (10a) and the barrier (10b) and connected between the output electrode (10a) and the barrier (10b)
Data Source
AI summary
The present invention provides an optical detection module, a method for manufacturing the same and an optical detection substrate. The optical detection module includes: a base substrate; a switch transistor on a side of the base substrate and including a gate electrode, an active layer, a first electrode and a second electrode; a photosensitive device for sensing light, on a side of the switch transistor away from the base substrate and including a power electrode, a photosensitive layer and an output electrode stacked in sequence, the output electrode being electrically connected to the first electrode of the switch transistor; a barrier on a side of the switch transistor away from the base substrate; and an insulation portion on the same layer as the output electrode and the barrier and connected between the output electrode and the barrier.


