Integrated Optical Nanothermometry for Real-Time Wafer Temperature Mapping
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Solution Overview
Problem
Current wafer temperature monitoring methods in semiconductor processing are inadequate for real-time, actual temperature feedback during processing, lacking spatial resolution, requiring thermal contact, and being unsuitable for harsh environments.
Innovation Solution
Integration of luminescent nanothermometers, such as rare-earth ion-doped nanoparticles, onto semiconductor wafers for remote temperature monitoring using UV, visible, and IR light excitation, enabling real-time temperature measurement with nanoscale precision and self-referenced readings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional temperature monitoring methods are used, then thermal contact is required for measurement, but this limits applicability in harsh environments and reduces measurement precision
Solution Approach 1:
The patent replaces conventional mechanical/thermal contact-based temperature sensing with optical-based luminescent nanothermometers. The nanothermometers emit light with intensity dependent on temperature, allowing remote, non-contact temperature measurement that works in harsh environments where thermal contact methods fail.
Solution Approach 2:
The patent introduces luminescent nanothermometers as intermediary agents between the wafer surface and the detection system. These nanothermometers absorb incident light and emit light with temperature-dependent intensity, serving as a mediator that enables remote temperature sensing without direct thermal contact between the sensor and wafer.
2Adaptability or versatility
If remote optical monitoring is implemented, then thermal contact is eliminated and harsh environment operation is enabled, but device complexity increases
Solution Approach 1:
The patent changes the operating parameters by using optical excitation and emission instead of thermal contact. The luminescent nanothermometers are excited by incident light and emit light with intensity that depends on temperature, transforming the measurement paradigm from thermal to optical domain to enable harsh environment operation.
3Reliability
If luminescent nanothermometers are integrated on wafer, then real-time temperature feedback is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent applies luminescent nanothermometers to the wafer surface before the actual processing begins. This preliminary integration allows the nanothermometers to be in place and ready to provide real-time temperature feedback throughout the processing sequence, enabling continuous monitoring without interrupting the fabrication flow.
Solution Approach 2:
The patent uses luminescent nanothermometers that can be deposited as nanoscale layers or particles on the wafer surface. These nanothermometers act as optical copies or proxies that report temperature information through light emission, allowing temperature monitoring without physical contact or complex integrated circuit temperature sensors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Provides real-time, non-invasive, and accurate temperature monitoring across the wafer surface with nanoscale precision, operating in harsh conditions without the need for thermal contact or calibration, and enabling full wafer temperature mapping.
Implementation Method 1
The luminescent thermometers can be configured to receive incident light and emit light in response to the received incident light. The emitted light can have an intensity that depends on a temperature of a portion of the surface of the wafer where the luminescent thermometers are formed.
Implementation Method 2
The luminescent thermometers can be configured to receive incident light and emit light in response to the received incident light
Implementation Method 3
the spectral data and temperature reading analyzer can be configured to determine the temperature of the wafer by using a relation between an emission intensity ratio of two thermally-coupled excited state energy levels of an emitting center of the luminescent thermometers and Boltzmann's law
Data Source
AI summary
Aspects of the present disclosure provide a semiconductor structure. For example, the semiconductor structure can include a wafer and luminescent thermometers formed on a surface of the wafer. The luminescent thermometers can be configured to receive incident light and emit light. The emitted light can have an intensity that depends on a temperature of a portion of the surface of the wafer where the luminescent thermometers are formed.