Optical Pattern Compensation for Photolithographic Mask Precision

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Solution Overview

Problem

Current photolithographic processes are limited by optical diffraction and other effects, making it challenging to further reduce the size of semiconductor device features and increase circuit density in integrated circuits.

Innovation Solution

A method for optical pattern compensation in photolithographic masks that involves determining contact areas, applying optical compensation based on specific criteria, adjusting distances between compensation areas, and classifying contact hole areas to optimize pattern alignment and spacing, thereby enhancing the precision and efficiency of mask design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If optical diffraction effects are considered in photolithographic processes, then manufacturing precision can be improved, but device complexity increases due to the need for optical pattern compensation

Engineering Contradiction:
Improvefeature size precisionVSAvoidmask design complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent divides the mask design into multiple contact hole areas and classifies them into different types based on their spatial relationships. Each contact hole area is processed independently with specific optical compensation applied only where needed, reducing overall complexity while maintaining precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies optical pattern compensation selectively to specific contact hole areas based on their classification. Not all areas require the same compensation - the system identifies which areas need compensation and applies it locally, avoiding unnecessary complexity in areas where it is not needed.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If optical pattern compensation is applied to all contact hole areas, then manufacturing precision is improved, but computational requirements and processing time increase

Engineering Contradiction:
Improvepattern alignment precisionVSAvoidmask conversion and writing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent applies optical pattern compensation partially - only to contact hole areas that require it based on their classification and spatial relationships. This partial application reduces computational requirements and processing time compared to applying compensation to all areas, while still achieving the necessary precision where required.

Inventive Principle:
Principle #16Partial or excessive action

3Productivity

If contact hole areas are classified and selectively processed, then processing efficiency is improved, but measurement and detection complexity increases

Engineering Contradiction:
Improvemask design throughputVSAvoidcontact area classification complexity
Core Design Contradiction:
ProductivityVSDifficulty of detecting and measuring

Solution Approach 1:

The patent performs preliminary classification of contact hole areas into different types based on their spatial relationships before applying optical compensation. This preliminary action organizes the data structure and enables efficient selective processing, improving overall productivity while the classification methodology remains manageable.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS7424700B2Method and system for selective optical pattern compensation
Publication Date: 2008.09.09 SEMICON MFG INT (SHANGHAI) CORP
  • US7424700B2 patent drawing
  • US7424700B2 patent drawing
  • US7424700B2 patent drawing

AI summary

A method and system for making a photographic mask. The method includes determining a first contact area, processing information associated with the first contact area, and determining whether a first optical compensation should be applied to the first contact area based on at least information associated with the first contact area. Additionally, the method includes if the first optical compensation should be applied to the first contact area, applying the first optical compensation to the first contact area, processing information associated with first optical compensation, determining a first distance between the first optical compensation and a second optical compensation or a second contact area, processing information associated with the first distance, and adjusting the first optical compensation based on at least information associated with the first distance.