Optical Polymer Stack for High-Bandwidth IC Communication

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Solution Overview

Problem

Integrated circuit performance is limited by low off-chip communication speeds and the use of optical interconnections in silicon occupies valuable substrate real estate, while conventional electro-optic materials like lithium niobate pose contamination risks and require high modulation voltages.

Innovation Solution

An integrated circuit with an optical polymer stack including a poled electro-optic polymer layer that modulates the index of refraction for optical communication, using a host polymer with aryl groups and second-order non-linear chromophores to stabilize the chromophore position and reduce contamination risks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If optical devices are embedded in silicon for optical interconnections, then communication bandwidth is improved, but substrate area consumption increases

Engineering Contradiction:
Improvecommunication bandwidthVSAvoidsubstrate area
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

The patent combines optical communication functionality with the existing silicon substrate by integrating optical devices directly into the silicon IC structure. This merging allows optical interconnections to coexist with conventional electronic circuits on the same substrate, achieving high bandwidth communication without requiring separate substrate real estate for optical components.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If conventional electro-optic materials like lithium niobate are used, then optical modulation is achieved, but contamination risk to fabrication facilities increases

Engineering Contradiction:
Improveoptical modulation capabilityVSAvoidfabrication facility contamination
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the material parameter from conventional electro-optic materials like lithium niobate to silicon-based electro-optic materials. This parameter change maintains the optical modulation capability while eliminating the contamination risk to fabrication facilities, as silicon is compatible with standard semiconductor manufacturing processes and does not pose contamination hazards.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If conventional electro-optic materials are used, then optical modulation is achieved, but high modulation voltages are required

Engineering Contradiction:
Improveoptical modulation capabilityVSAvoidmodulation voltage
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the material properties by using silicon-based electro-optic materials with different electro-optic coefficients compared to conventional materials like lithium niobate. This parameter change enables achieving the same optical modulation capability at lower voltage levels, reducing energy consumption and making the system compatible with standard IC voltage levels.

Inventive Principle:
Principle #35Parameter changes

4Reliability

If processing temperatures are increased for optical material formation, then optical device performance is improved, but underlying IC structures are degraded

Engineering Contradiction:
Improveoptical device performanceVSAvoidIC structure integrity
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent changes the processing temperature parameter by using silicon-based optical materials that can be formed and processed at lower temperatures compatible with existing IC structures. This temperature parameter adjustment allows optical device formation without degrading the underlying semiconductor structures, maintaining both optical performance and IC integrity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables high-bandwidth optical communication without significant semiconductor area consumption and reduces contamination risks, allowing for low-voltage modulation compatible with conventional IC voltages.

Implementation Method 1

The IC can be configured to modulate an electric field across the poled electro-optic polymer, the electric field modulation causing the poled electro-optic polymer to undergo an electro-optic response comprising a modulated index of refraction.

Methodology Applied
Scientific EffectElectro-optic effect: Electro-Optic Effects

Data Source

PatentUS9703128B2Method for making an integrated circuit having optical data communication
Publication Date: 2017.07.11 LIGHTWAVE LOGIC INC
  • US9703128B2 patent drawing
  • US9703128B2 patent drawing
  • US9703128B2 patent drawing

AI summary

An integrated circuit is configured for optical communication via an optical polymer stack located on top of the integrated circuit. The optical polymer stack may include one or more electro-optic polymer devices including an electro-optic polymer. The electro-optic polymer may include a host polymer and a second order nonlinear chromomophore, the host polymer and the chromophore both including aryl groups configured to interact with one another to provide enhanced thermal and/or temporal stability.