Optical Scanner Regulating Member Suppresses Shaft Deformation

The patent divides the impact relaxation part into multiple segments (first impact relaxation part and second impact relaxation part) positioned at different locations. This segmentation allows different etching conditions to be applied to different regions, enabling the mirror and torsion bar to be formed with appropriate thickness while still achieving effective impact relaxation through the distributed segmented structure.

The patent applies local quality by creating impact relaxation parts with specific properties at specific locations where impact forces are most likely to occur. The etching is localized to form these impact relaxation parts without uniformly etching the entire substrate, thus preserving the strength of the mirror and torsion bar while providing impact protection where needed.

By segmenting the impact relaxation part into multiple smaller features distributed across the substrate, the patent enables the use of shorter etching times. The segmented structure achieves effective impact relaxation without requiring the extended etching time that would be needed for a single large impact relaxation feature, thus improving manufacturing efficiency.

The patent applies partial action by forming impact relaxation parts only at specific critical locations rather than uniformly across the entire substrate. This partial etching approach achieves sufficient impact protection at key areas while avoiding excessive etching time and material removal from non-critical areas.

The patent segments the impact relaxation part into multiple smaller features positioned at different locations around the mirror and torsion bar. This segmentation allows each segment to be formed with adequate spacing from critical components, maintaining etching processability while collectively providing effective impact relaxation through the distributed segmented structure.

The patent employs asymmetric positioning of the segmented impact relaxation parts, placing them at specific locations where impact forces are most likely to occur rather than uniformly distributing them. This asymmetric arrangement optimizes impact relaxation effectiveness while maintaining manufacturability, as each asymmetrically positioned segment can be etched with appropriate clearance.