Optical Scatterometry for Edge Placement Error Measurement
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Solution Overview
Problem
Current methods for measuring edge placement error in lithographic processes are either destructive or indirect, making them time-consuming and limiting the ability to adjust processing conditions in real-time, and they often use targets with different dimensions and pitches than the actual product features, reducing measurement accuracy.
Innovation Solution
A method and apparatus for directly and non-invasively measuring edge placement error by using a substrate with layers of electrically conducting and non-electrically conducting materials, where the edge placement error is determined by analyzing the reflectivity of the substrate when illuminated with optical radiation, allowing for precise correlation with the actual product structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If destructive measurement techniques are used to measure edge placement error, then measurement accuracy is improved, but the substrate is damaged and measurement time increases
Solution Approach 1:
The patent replaces destructive mechanical cross-sectioning methods with optical scattering measurement. The scatterometer directs radiation at the substrate and analyzes scattered light patterns to determine edge placement error, eliminating the need for physical sectioning while maintaining measurement accuracy and enabling rapid non-contact measurement.
Solution Approach 2:
The patent introduces a scatterometer as an intermediary measurement device that uses optical radiation to indirectly probe the edge placement error. Instead of directly observing or sectioning the structure, the scatterometer measures scattering characteristics that correlate with edge placement, providing a non-destructive measurement pathway.
2Productivity
If indirect measurement methods are used to determine edge placement error, then measurement speed is improved, but measurement accuracy deteriorates due to reliance on separate overlay and critical dimension measurements
Solution Approach 1:
The patent replaces the indirect multi-step measurement approach (separate overlay and critical dimension measurements) with a direct optical scattering measurement that specifically targets edge placement error. The scatterometer configuration and analysis method are designed to directly extract edge placement information from scattering patterns, providing both speed and accuracy.
3Ease of operation
If conventional scatterometry is used with large grating targets, then measurement simplicity is improved, but measurement relevance to actual product features deteriorates due to dimension and pitch differences
Solution Approach 1:
The patent applies local quality by designing the scatterometer to measure specific local features (edge placement error) rather than averaging over large grating areas. The measurement target and analysis are optimized to focus on the critical edge regions, ensuring the measurement reflects actual product feature characteristics rather than bulk grating properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables rapid and accurate measurement of edge placement error, allowing for immediate adjustments to processing conditions and improving the correlation between measurement targets and actual product features, thereby enhancing the precision and efficiency of the lithographic process.
Implementation Method 1
detecting scattered radiation while illuminating the first structure with optical radiation to obtain a first signal
Data Source
AI summary
A method of determining edge placement error within a structure produced using a lithographic process, the method including: receiving a substrate having a first structure produced using the lithographic process, the first structure having first and second layers, each of the layers having first areas of electrically conducting material and second areas of non-electrically conducting material; receiving a target signal indicative of a first target relative position which is indicative of target position of edges between the first areas and the second areas of the first layer relative to edges between the first areas and second areas of the second layer in the first structure during the lithographic process; detecting scattered radiation while illuminating the first structure with optical radiation to obtain a first signal; and ascertaining an edge placement error parameter on the basis of first signal and the first target relative position.


