Optical Semiconductor Element Bonding via Connecting Portion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for manufacturing optical semiconductor elements face challenges with unintended etching during the bonding process, which can damage the semiconductor element and reduce bonding strength.
Innovation Solution
The proposed solution involves a substrate with a silicon layer that includes a waveguide, a recess, a terrace, and a connecting portion. The semiconductor element, made of a III-V compound semiconductor, is bonded to these features and has a first tapered portion protruding in the direction of the waveguide. The connecting portion crosses the recess, blocking liquid entry and reducing unintended etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor element is bonded to the silicon layer without a connecting portion crossing the recess, then the bonding process is simpler, but liquid enters the recess and causes unintended etching of the semiconductor element
Solution Approach 1:
The silicon layer is segmented into distinct functional regions: the waveguide for optical transmission, the recess for positioning, the terrace for support, and the connecting portion as a bridge structure. This segmentation allows each region to serve its specific function while collectively preventing liquid penetration and unintended etching.
Solution Approach 2:
The connecting portion acts as an intermediary structure that spans across the recess, blocking liquid from entering the recess and reaching the semiconductor element. This intermediary barrier prevents harmful liquid contact while maintaining the structural integrity and optical functionality of the device.
2Manufacturing precision
If the connecting portion is added to block liquid entry, then unintended etching is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The connecting portion is formed as a pre-structured feature of the silicon layer before the semiconductor element is bonded. This preliminary formation of the blocking structure ensures that when liquid is introduced during bonding, it is already blocked from entering the recess, preventing unintended etching without requiring additional post-bonding steps.
Solution Approach 2:
The connecting portion is designed with specific geometric parameters (width, height, position) that optimize its blocking capability. By carefully controlling these parameters, the structure effectively blocks liquid while maintaining compatibility with standard manufacturing processes and material properties.
3Loss of energy
If the semiconductor element is bonded directly without optimized taper shapes, then the bonding process is simpler, but light loss increases
Solution Approach 1:
The connecting portion and semiconductor element are designed with tapered (curved) surfaces rather than abrupt flat transitions. These curved taper shapes gradually transition the optical mode, reducing scattering and reflection losses at the interface while maintaining a manageable structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces unintended etching of the semiconductor element, enhances bonding strength, and minimizes light loss by optimizing the taper shapes of the connecting portion and the semiconductor element.
Implementation Method 1
The connecting portion crosses the recess and is connected to the waveguide and the terrace. The semiconductor element is bonded on the waveguide, the recess, and the connecting portion
Implementation Method 2
a semiconductor element made of a III-V compound semiconductor and bonded to the silicon layer
Data Source
AI summary
An optical semiconductor element includes, a substrate having a silicon layer, and a semiconductor element made of a III-V compound semiconductor and bonded to the silicon layer. The silicon layer has a waveguide, a recess, a terrace, and a connecting portion. The recess is a recessed part lower than a surface of the waveguide, a surface of the terrace, and a surface of the connecting portion and is provided between the waveguide and the terrace. The semiconductor element is bonded on the waveguide, the recess, and the connecting portion and has a first tapered portion protruding in a direction in which the waveguide extends. The connecting portion crosses the recess and is connected to the waveguide and the terrace.


