Optical Semiconductor Electrode Insulation Design

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Solution Overview

Problem

Existing optical semiconductor elements face challenges in improving light emission/reception efficiency and reliability due to potential short circuits between electrodes and limited area optimization for efficient light generation or absorption.

Innovation Solution

The optical semiconductor element design includes a substrate with a semiconductor stacked body, a mesa portion, and electrodes with specific insulating layers and openings to enhance insulation and reduce electrode area, allowing for increased light emission/reception efficiency and reliability by exposing electrodes and forming stepped insulation layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the p-side electrode and n-side electrode are arranged close to each other, then the device area is reduced, but a short circuit may occur between the electrodes

Engineering Contradiction:
Improvedevice areaVSAvoidshort circuit risk
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

An insulating layer is introduced as an intermediary substance between the p-side electrode and n-side electrode. This insulating layer physically separates the two electrodes while allowing them to be positioned close together, thus reducing the overall device area while preventing short circuits through the intermediary insulation barrier.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design improves light emission/reception efficiency by optimizing the area of the optical layer and enhances reliability by preventing short circuits through enhanced insulation, particularly effective for long-wavelength light generation or absorption where area efficiency is critical.

Implementation Method 1

an optical layer that generates or absorbs light

Methodology Applied
Scientific EffectLight emission/absorption: Luminescence

Implementation Method 2

a first insulating layer formed on the first electrode... a second insulating layer formed on the second electrode

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Data Source

PatentUS20230120130A1Optical semiconductor element
Publication Date: 2023.04.20 HAMAMATSU PHOTONICS KK
  • US20230120130A1 patent drawing
  • US20230120130A1 patent drawing
  • US20230120130A1 patent drawing

AI summary

An optical semiconductor element includes: a substrate; a semiconductor stacked body including an optical layer, a first semiconductor layer, and a second semiconductor layer, the optical layer and the first semiconductor layer forming a mesa portion and the second semiconductor layer including an outer portion; a first electrode formed on the mesa portion and connected to the first semiconductor layer; a first insulating layer formed on the first electrode; a second electrode including a first portion connected to the second semiconductor layer at the outer portion and a second portion arranged on the first insulating layer so as to overlap the first electrode; and a second insulating layer formed on the second electrode. An opening for exposing the first electrode is formed in the first insulating layer. An opening for exposing the second portion of the second electrode is formed in the second insulating layer.