Optical Semiconductor Device Leakage Current Suppression
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Solution Overview
Problem
The integration of semiconductor laser and optical waveguide sections in optical semiconductor devices faces challenges in achieving high optical coupling efficiency due to light reflection or scattering caused by the separation groove used for electrical separation, which compromises the electrical separation and current injection efficiency.
Innovation Solution
The optical semiconductor device incorporates a semiconductor current constriction layer with a p-type semiconductor layer and a leakage current suppression layer, featuring a first low carrier concentration layer and a second Fe-doped semiconductor layer, which suppresses leakage current and prevents light reflection or scattering, enabling electrical separation compatible with high optical coupling efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separation groove is provided in the p-type semiconductor layer to electrically separate the semiconductor laser section from the optical waveguide section, then electrical separation is achieved, but light reflection or scattering occurs which reduces optical coupling efficiency
Solution Approach 1:
An Fe-doped semiconductor layer is introduced as an intermediary between the p-type semiconductor layer and the optical waveguide section. This intermediate layer provides electrical separation through high resistance while maintaining optical transparency, thus preventing light reflection or scattering and preserving optical coupling efficiency
Solution Approach 2:
The Fe-doped semiconductor layer changes the electrical parameter (resistance) of the separation structure by introducing iron doping, which increases resistance to suppress leakage current while maintaining optical properties. The doping concentration is controlled to achieve the desired balance between electrical separation and optical transparency
2Reliability
If the separation groove is deepened to improve electrical separation, then leakage current suppression is enhanced, but light reflection or scattering increases which further reduces optical coupling efficiency
Solution Approach 1:
The Fe-doped semiconductor layer serves as a mediator that achieves effective electrical separation without requiring deep groove structures. The layer provides sufficient resistance to suppress leakage current while its controlled thickness and doping profile ensure optical transparency, thereby avoiding light reflection or scattering issues associated with deep grooves
Solution Approach 2:
By controlling the Fe doping concentration and layer thickness, the electrical and optical parameters are optimized simultaneously. The doping concentration is sufficient to provide high resistance for leakage current suppression, while the layer thickness is controlled to maintain optical transparency and prevent light reflection or scattering
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses leakage current and maintains high optical coupling efficiency by preventing light reflection or scattering, ensuring efficient electrical separation and current injection into the semiconductor laser section while preventing current leakage to the optical waveguide section.
Implementation Method 1
the second Fe-doped semiconductor layer is provided on the p-type semiconductor layer side on the semiconductor laser section, it is possible to suppress a leakage current from the p-type semiconductor layer on the semiconductor laser section to the optical waveguide section
Implementation Method 2
the first Fe-doped semiconductor layer is disposed on a side of the p-type cladding layer via the side wall part of the first low carrier concentration layer and is not in contact with the p-type cladding layer
Implementation Method 3
light may be reflected or scattered when light from the semiconductor laser section is coupled with the optical waveguide section
Data Source
AI summary
An upper cladding layer includes a first low carrier concentration layer having a lower carrier concentration than the p-type cladding layer and a first Fe-doped semiconductor layer formed on the first low carrier concentration layer. The leakage current suppression layer includes a second Fe-doped semiconductor layer disposed on a side of the p-type semiconductor layer. The first low carrier concentration layer has a side wall part that is in contact with a side face of the p-type cladding layer. The first Fe-doped semiconductor layer is disposed on a side of the p-type cladding layer via the side wall part of the first low carrier concentration layer and is not in contact with the p-type cladding layer.