Optical Semiconductor Mesa Structure for Peeling Prevention
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Solution Overview
Problem
In hybrid integration technology for optical semiconductor elements, the limitation of compound semiconductor wafer diameter restricts the size of active elements on silicon wafers, leading to significant loss of compound semiconductor material and potential peeling issues due to wet etching, especially when small pieces are jointed to the silicon wafer.
Innovation Solution
The method involves stacking compound semiconductor layers on a substrate, dividing it into small pieces, forming terraces, grooves, and walls on a silicon substrate, and jointing these pieces while creating a second mesa opposite to the first, with grooves and walls arranged to prevent etchant entry and peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If the compound semiconductor wafer is divided into small pieces to reduce material loss, then the loss of compound semiconductor is reduced, but the junction strength is lowered and peeling may occur
Solution Approach 1:
The compound semiconductor wafer is divided into multiple small pieces, each containing an active element. This segmentation allows efficient use of the limited wafer area while maintaining functional integrity of each piece through proper structural design with mesas and connection portions
Solution Approach 2:
Connection portions are formed on the compound semiconductor layers before wafer division. These pre-formed connection portions extend toward the edges and provide built-in reinforcement that prevents peeling during subsequent processing and assembly operations
2Ease of manufacture
If the silicon wafer and compound semiconductor wafer have the same diameter, then the wafer junction can be performed, but the compound semiconductor wafer diameter is limited and the region for forming active elements is small
Solution Approach 1:
The compound semiconductor wafer is divided into multiple small pieces, each containing an active element. This segmentation allows efficient use of the limited wafer area while maintaining functional integrity of each piece through proper structural design with mesas and connection portions
Solution Approach 2:
The invention transitions from a two-dimensional planar junction to a three-dimensional structure with mesas and connection portions extending in multiple directions. This dimensional change allows better utilization of the limited wafer area while maintaining junction strength
3Manufacturing precision
If wet etching is used to remove the compound semiconductor substrate, then the stack structure is exposed, but the etchant enters trenches and etches the compound semiconductor layer, causing peeling
Solution Approach 1:
Connection portions are formed on the compound semiconductor layers before wafer division. These pre-formed connection portions extend toward the edges and provide built-in reinforcement that prevents peeling during subsequent processing and assembly operations
Solution Approach 2:
The connection portions act as a cushioning structure that absorbs the harmful effect of etchant penetration. By providing this protective structure in advance, the invention prevents the etchant from reaching and damaging the critical compound semiconductor layers at the junction interface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the peeling of small pieces and reduces compound semiconductor loss by preventing etchant entry, thereby stabilizing the optical semiconductor element and enhancing its operational characteristics.
Implementation Method 1
the walls suppress the entering of an etchant from each groove
Implementation Method 2
wet-etching the first substrate so as to expose the compound semiconductor layers
Data Source
AI summary
A method of manufacturing an optical semiconductor element includes: stacking a plurality of compound semiconductor layers on a first substrate containing a compound semiconductor; dividing the first substrate into small pieces; forming terraces, grooves, walls, and a first mesa for a waveguide on a second substrate containing silicon; jointing at least one small piece to the second substrate after the forming; wet-etching the first substrate so as to expose the compound semiconductor layers after the jointing; and forming a second mesa opposite to the first mesa from the compound semiconductor layers; wherein the grooves are formed on both sides of the first mesa, the terraces are formed on both sides of the first mesa and the grooves, and the walls are arranged in an extending direction of each groove.


