Optical Semiconductor Ridge Stripe Residue Removal
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Solution Overview
Problem
Existing methods for manufacturing optical semiconductor devices with ridge stripe configurations face challenges in completely removing Si-based residues without altering the width of the insulating film mask or losing the mask, which affects the stability and characteristics of the semiconductor laser.
Innovation Solution
A method involving the formation of a ridge stripe configuration using SiCl4 etching, followed by the removal of the Si-based residue's oxide layer with diluted hydrochloric acid and subsequent removal with an alkaline solution, ensuring the mask integrity is maintained.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a Si based residue is oxidized using O2 plasma and then removed by diluted BHF, then the Si based residue can be removed completely, but the insulating film is etched and mask width changes
Solution Approach 1:
The residue removal process is divided into two separate steps: first oxidizing the Si-based residue with O2 plasma to form Si oxide, then removing the oxidized residue with diluted BHF. This segmentation allows selective removal of residue while minimizing mask etching by controlling exposure time and concentration in each step
Solution Approach 2:
O2 plasma is used as an intermediary to transform the Si-based residue into Si oxide, which then becomes susceptible to removal by diluted BHF. This intermediary transformation enables selective residue removal without directly attacking the insulating film mask
2Reliability
If acid solution is used to remove Si based residue, then residue removal is achieved, but Si based residue cannot be removed sufficiently
Solution Approach 1:
The chemical state of the Si-based residue is changed from elemental Si to Si oxide through O2 plasma oxidation. This parameter change (chemical composition) makes the residue soluble in diluted BHF, achieving complete removal that acid solutions alone cannot accomplish
3Reliability
If the configuration is complicated to stabilize characteristics, then characteristic stabilization is improved, but manufacturing complexity increases
Solution Approach 1:
The Si-based residue, which causes crystal growth prevention and potential mask degradation, is extracted and removed through the two-step process of O2 plasma oxidation followed by diluted BHF removal. This extraction eliminates harmful elements while preserving the complicated but necessary ridge stripe configuration for characteristic stabilization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes Si-based residues without changing the mask width or losing the insulating film, thereby stabilizing the characteristics of the optical semiconductor device.
Implementation Method 1
etching is performed using gas containing SiCl4 with an insulating film as a mask
Implementation Method 2
a Si based residue is oxidized using O2 plasma, etc., and then, a Si oxide is removed
Implementation Method 3
a Si oxide is removed by diluted BHF
Data Source
AI summary
A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.