Optical Semiconductor Structure for Stress and Eddy Current Reduction

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Solution Overview

Problem

Existing semiconductor optical modulators face issues with stress generation and eddy current loss due to differences in thermal expansion coefficients between resin bodies and metal wirings, leading to reduced reliability and impaired electro-optical response characteristics.

Innovation Solution

The optical semiconductor device incorporates a design with separated protruding portions and acute-angled protective film coverage, reducing stress and eddy current loss by minimizing the exposed area of the resin body and wiring, and using benzocyclobutene for the resin body to facilitate easier formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the protective film is formed at high temperatures, then the protective film can be properly formed, but stress is generated due to difference in linear expansion coefficients between resin body and metal wiring

Engineering Contradiction:
Improveprotective film formationVSAvoidstress in protective film
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The protective film is divided into multiple segments: a first protective film formed at high temperature covering the wiring, and a second protective film formed at lower temperature covering the resin body. This segmentation allows each film to be formed under optimal temperature conditions, preventing stress generation from thermal expansion differences between materials.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The formation temperature parameter is changed between different protective films. The first protective film is formed at high temperature suitable for metal wiring adhesion, while the second protective film is formed at lower temperature suitable for resin body compatibility. This parameter change resolves the conflict between proper film formation and stress prevention.

Inventive Principle:
Principle #35Parameter changes

2Area of stationary object

If the wiring is positioned close to the protruding portions, then the device size is reduced, but eddy current loss increases

Engineering Contradiction:
Improvedevice sizeVSAvoideddy current loss
Core Design Contradiction:
Area of stationary objectVSLoss of energy

Solution Approach 1:

The protruding portions extend in the thickness direction (vertical dimension) rather than only in the planar direction. This dimensional change allows the wiring to be positioned horizontally close to the protruding portions for compact size, while the vertical separation and acute angle configuration reduce eddy current loss by minimizing parallel current paths.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If the protective film covers both the top surface and side surface, then complete protection is achieved, but stress concentration occurs at right angles

Engineering Contradiction:
Improveprotective film coverageVSAvoidstress concentration
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

The corner portions of the protective film are designed with curved surfaces instead of right angles. This curvature eliminates stress concentration points that would occur at sharp corners, allowing the protective film to cover both top and side surfaces completely while distributing stress evenly throughout the structure.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively decreases stress and eddy current loss, enhancing the reliability and electro-optical response characteristics of the semiconductor device.

Implementation Method 1

utilizing benzocyclobutene for the resin body's thermosetting property

Methodology Applied
Scientific EffectThermosetting:

Data Source

PatentUS12631935B2Optical semiconductor device
Publication Date: 2026.05.19 SUMITOMO ELECTRIC INDUSTRIES LTD
  • US12631935B2 patent drawing
  • US12631935B2 patent drawing
  • US12631935B2 patent drawing

AI summary

An optical semiconductor device includes: an element portion provided on a principal surface of a substrate; first protruding portions provided on the principal surface; a resin body including a top surface and embedding the element portion and the first protruding portions; a wiring provided on the top surface; and a protective film covering the top surface and the wiring. The element portion includes a mesa protruding portion including a first semiconductor layer, and a mesa waveguide. The first protruding portions are separated from each other and each includes the first semiconductor layer. The wiring is provided between the first protruding portions and the element portion and includes a side surface adjacent to the first protruding portions. An angle formed by a first portion covering the side surface of the wiring and a second portion covering the top surface and connected to the first portion is acute.