Optical Sensor Dual Photodiode Dynamic Range

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current optical sensors and solid-state imaging devices have a limited dynamic range, particularly on the low illumination side, which hinders their effectiveness in various applications requiring broad optical wavelength compatibility and high sensitivity across different light intensity ranges.

Innovation Solution

The development of an optical sensor incorporating a light-receiving element, storage capacitors, and a transfer switch, featuring a floating diffusion capacitor and a lateral overflow integration capacitor, along with a non-LDD/MOS transistor with reduced impurity concentration in the drain region, enables wide dynamic range performance from single-photon to high illumination levels, combined with high sensitivity and broad optical wavelength compatibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If conventional optical sensors are used, then manufacturing simplicity is maintained, but the dynamic range on the low illumination side remains limited

Engineering Contradiction:
Improvedynamic rangeVSAvoiddevice complexity
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The optical sensor divides the dynamic range into two segments: a first dynamic range handled by a first photodiode and a second dynamic range handled by a second photodiode. This segmentation allows each photodiode to be optimized for specific illumination levels, thereby expanding the overall dynamic range without significantly increasing device complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic switching between different photodiodes based on illumination conditions. A switching mechanism dynamically selects which photodiode to use, allowing the sensor to adapt to varying light levels and maintain optimal performance across the extended dynamic range

Inventive Principle:
Principle #15Dynamics

2Illumination intensity

If the dynamic range is widened to high illumination levels, then high light detection capability is improved, but sensitivity in the low light intensity range deteriorates

Engineering Contradiction:
Improvehigh illumination detectionVSAvoidlow light sensitivity
Core Design Contradiction:
Illumination intensityVSMeasurement precision

Solution Approach 1:

Each photodiode is designed with different characteristics optimized for its specific operating range. The first photodiode has characteristics optimized for low light sensitivity, while the second photodiode is optimized for high illumination handling. This local quality optimization ensures that each component performs excellently in its designated range without compromising the other

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The switching mechanism dynamically selects the appropriate photodiode based on current illumination conditions, ensuring that the sensor always uses the photodiode with optimal characteristics for the current light level, thereby maintaining both high light detection capability and low light sensitivity

Inventive Principle:
Principle #15Dynamics

3Measurement precision

If single-photon detection capability is achieved, then sensitivity is improved, but saturation performance at high illumination levels deteriorates

Engineering Contradiction:
Improvesingle-photon sensitivityVSAvoidhigh saturation performance
Core Design Contradiction:
Measurement precisionVSIllumination intensity

Solution Approach 1:

The sensor segments the detection task between two photodiodes: the first photodiode is designed with high sensitivity for single-photon detection, while the second photodiode is designed with higher saturation capacity for high illumination levels. This segmentation allows each component to excel at its specific task without compromise

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dynamic switching mechanism directs single-photon signals to the first photodiode for high-sensitivity detection, while directing high illumination signals to the second photodiode for saturation-resistant handling, thereby achieving both single-photon sensitivity and high saturation performance simultaneously

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution provides an optical sensor with enhanced sensitivity, speed, and wide dynamic range, enabling effective detection from single-photon to high illumination levels, thus contributing to the development of safer and more secure societal applications.

Implementation Method 1

a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS10154222B2Optical sensor, signal reading method therefor, solid-state imaging device, and signal reading method therefor
Publication Date: 2018.12.11 TOHOKU UNIV
  • US10154222B2 patent drawing
  • US10154222B2 patent drawing
  • US10154222B2 patent drawing

AI summary

One problem addressed by the present invention is to provide an optical sensor, a solid-state imaging device, and methods for reading the signals therefrom, which contribute greatly to the development of industry and the realization of a safer and more secure society. One solution according to the present invention is an optical sensor having a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, wherein the storage capacitors are a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch is a non-LDD/MOS transistor, that is, a non-LDD/MOS transistor for which the impurity concentration of the drain region is reduced by 50%.