Optical Slab Region Thickness Uniformity via Epitaxial Growth

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Solution Overview

Problem

The inconsistency in the thickness of slab regions in optical devices due to etching processes leads to inconsistent performance and increased waste in fabrication, affecting the reliability and efficiency of active components like modulators and light sensors.

Innovation Solution

A method is introduced where a layer of light-transmitting medium with a uniform thickness is used as the slab region, and an active medium is grown and etched to form a ridge waveguide, ensuring consistent thickness and reducing fabrication waste across multiple devices on a single wafer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If etching is used to form slab regions, then the fabrication process is simple, but the thickness uniformity deteriorates

Engineering Contradiction:
Improvefabrication process simplicityVSAvoidslab region thickness uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by forming the slab region thickness through epitaxial growth before the etching process. The uniform thickness is established in advance during the epitaxial growth stage, and the subsequent etching process does not alter this pre-established uniformity. This resolves the contradiction by ensuring thickness uniformity is determined by the precise epitaxial growth process rather than being affected by the less precise etching process.

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If etching is used to form slab regions, then the process is straightforward, but the performance consistency worsens

Engineering Contradiction:
Improveprocess straightforwardnessVSAvoiddevice performance consistency
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent ensures performance consistency by preliminarily establishing the slab region thickness through epitaxial growth before etching. Since the thickness uniformity is determined in advance during epitaxial growth, all devices on the wafer inherit consistent thickness values, leading to consistent performance across devices while maintaining the straightforward etching process.

Inventive Principle:
Principle #10Preliminary action

3Productivity

If traditional etching is used, then material removal is efficient, but fabrication waste increases

Engineering Contradiction:
Improvematerial removal efficiencyVSAvoidfabrication waste
Core Design Contradiction:
ProductivityVSLoss of substance

Solution Approach 1:

The patent reduces fabrication waste by preliminarily defining the exact slab region thickness through epitaxial growth. This approach minimizes the need for aggressive material removal during etching, as the thickness is already precisely established. Consequently, less material is wasted during the etching process while maintaining high productivity through efficient epitaxial growth and selective etching.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach achieves uniformity in slab region thickness, enhancing the performance and reducing waste in the fabrication of optical devices, resulting in more consistent and efficient active components.

Implementation Method 1

An active medium is grown on the etch stop and on the light-transmitting medium

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Data Source

PatentUS8728837B2Enhancing uniformity of slab region thickness in optical components
Publication Date: 2014.05.20 MELLANOX TECHNOLOGIES INC
  • US8728837B2 patent drawing
  • US8728837B2 patent drawing
  • US8728837B2 patent drawing

AI summary

A method of forming an optical device includes generating a device precursor having a layer of a light-transmitting medium on a base. The method also includes forming an etch stop on the layer of light-transmitting medium. An active medium is grown on the etch stop and on the light-transmitting medium such that the light-transmitting medium is between the base and the grown active medium. The grown active medium is etched down to the etch stop so as to define a ridge in the active medium. The ridge of active medium defines a portion of a component waveguide that will guide a light signal through an active component on the device.