Optical Component Thermal Control in Stacked Semiconductor Structures
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to increased complexity in manufacturing and thermal management challenges due to high power density, which can diminish the performance of thermally sensitive optical components if heat dissipation is not efficiently managed.
Innovation Solution
A semiconductor structure incorporating an optical component, a thermal control mechanism, a first dielectric layer, and a via configuration that directs heat emitted from the optical component to the periphery for efficient dissipation, utilizing a thermoelectric cooler and dielectric materials to maintain performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but the manufacturing complexity increases
Solution Approach 1:
The patent divides the semiconductor device into multiple stacked layers (first substrate, second substrate, intermediate layer) with through-substrate vias connecting them. This vertical segmentation allows high integration density without increasing lateral manufacturing complexity, as each layer can be processed independently through standardized TSV formation steps.
Solution Approach 2:
The patent transitions from lateral integration to vertical integration by stacking functional layers in the z-dimension. Through-substrate vias provide vertical interconnects between layers, enabling high component density without requiring smaller lateral feature sizes, thus avoiding the manufacturing complexity associated with miniaturization.
2Quantity of substance
If the number of components with different materials is increased to improve integration density, then more functions can be integrated, but thermal management demands increase due to high power density
Solution Approach 1:
The patent introduces an intermediate layer between the first and second substrates that contains through-substrate vias serving as thermal intermediaries. These vias provide dedicated thermal pathways to conduct heat away from high-power-density regions, mediating between the heat-generating components and the heat-sinking substrates.
Solution Approach 2:
The patent implements localized thermal management by placing through-substrate vias specifically in regions requiring heat dissipation. The intermediate layer provides localized thermal conduction pathways rather than uniform thermal management, allowing different regions of the device to have tailored thermal properties based on their power density requirements.
3Quantity of substance
If components are miniaturized to increase integration density, then more components fit in a given area, but heat dissipation efficiency decreases due to high power density
Solution Approach 1:
The patent moves heat dissipation from the lateral plane to the vertical dimension by implementing through-substrate vias that extend through the entire stacked structure. This vertical thermal pathway allows efficient heat conduction from miniaturized high-density components directly to the substrates, bypassing lateral thermal resistance issues.
Solution Approach 2:
The through-substrate vias act as thermal intermediaries that bridge the heat-generating miniaturized components and the heat-sinking substrates. These vias provide direct thermal conduction pathways, ensuring that even though components are miniaturized and densely packed, heat can be efficiently transferred vertically through the intermediate layer to the substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermal control mechanism effectively dissipates heat away from the optical component, preventing damage and maintaining or enhancing the semiconductor structure's performance by managing temperature effectively.
Implementation Method 1
forming a thermal control mechanism adjacent to the optical component and at least partially surrounded by the first dielectric layer. Forming the thermal control mechanism includes forming a first thermoelectric member having a first conductivity type, forming a second thermoelectric member having a second conductivity type opposite to the first conductivity type
Data Source
AI summary
A method of manufacturing a semiconductor structure includes forming a first dielectric layer surrounding an optical component. The method further includes forming a thermal control mechanism adjacent to the optical component and at least partially surrounded by the first dielectric layer. Forming the thermal control mechanism includes forming a first thermoelectric member having a first conductivity type, forming a second thermoelectric member having a second conductivity type opposite to the first conductivity type, wherein the second thermoelectric member is opposite to the first thermoelectric member; and forming a conductive structure over and electrically connected to the thermal control mechanism. The method further includes forming a second dielectric layer over the first dielectric layer and surrounding the conductive structure.