Optical Tomography for Real-Time Ion Beam Profile Control
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Solution Overview
Problem
Existing ion implantation systems lack effective methods for characterizing and controlling the ion beam's two-dimensional profile and ion density, which is crucial for precise semiconductor doping.
Innovation Solution
A non-invasive ion beam characterization system using collimated sensors and a transformation motion apparatus to image and compute a two-dimensional profile of the ion beam, allowing for real-time control of the ion beam's parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional ion implantation systems are used without advanced characterization methods, then the system structure remains simple, but the measurement precision of ion beam profile and ion density is insufficient
Solution Approach 1:
The patent introduces light as an intermediary substance to transfer information about the ion beam's two-dimensional profile and ion density. Optical sensors detect light emitted or scattered by the ion beam, converting physical beam characteristics into measurable optical signals without direct contact with the ion beam, thereby achieving precise measurement while maintaining system simplicity
Solution Approach 2:
The patent replaces complex mechanical scanning systems with optical field-based measurement. Instead of physically moving sensors or beam components to map the ion beam profile, the system uses optical detection fields to capture spatial information simultaneously, eliminating mechanical complexity while improving measurement precision
2Manufacturing precision
If non-invasive optical characterization methods are implemented, then the manufacturing precision of ion implantation is improved, but the device complexity increases due to additional sensors and control systems
Solution Approach 1:
The patent designs the optical characterization system to serve multiple functions simultaneously: measuring ion beam profile, determining ion density, and providing feedback for beam control. This multi-functionality reduces the need for separate specialized devices, achieving improved manufacturing precision while limiting the increase in overall device complexity
Solution Approach 2:
The patent implements a feedback loop where optical sensors continuously monitor the ion beam characteristics and feed this information back to the beam control system. This enables real-time adjustments to maintain precise doping parameters, improving manufacturing precision through closed-loop control rather than requiring overly complex open-loop systems
3Productivity
If real-time ion beam characterization is achieved through optical tomography, then the productivity of semiconductor fabrication is improved, but the device complexity and initial investment increase
Solution Approach 1:
The patent enables continuous real-time characterization of the ion beam during the implantation process rather than requiring intermittent or post-process measurements. The optical sensors continuously track beam parameters, allowing for immediate detection and correction of deviations, thereby maintaining high productivity through uninterrupted monitoring and control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system enables precise characterization and control of the ion beam's two-dimensional profile and ion density, improving the accuracy and efficiency of semiconductor doping processes.
Implementation Method 1
an optical sensor configured to image a portion of the ion beam
Data Source
AI summary
An ion beam characterization system has one or more sensors positioned with respect to an ion beam. The one or more sensors image a portion of the ion beam over a predetermined range of angles and positions of the one or more sensors with respect to the portion of the ion beam, and define imaging data associated with the portion of the ion beam. A controller is configured to define a two-dimensional profile of the portion of the ion beam based, at least in part, on the imaging data. The two-dimensional profile is based, at least in part, on the predetermined range of angles and positions of the one or more sensors with respect to the ion beam and light associated with the ion beam. The sensors receive the light associated with the ion beam and to provide a signal to the controller based on the received light.