Optical Transceiver 3D Semiconductor Package Infrared Signal
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Solution Overview
Problem
The challenge lies in increasing the integration density of semiconductor devices while minimizing data distortion and interference between signal paths in three-dimensional semiconductor packages, which is exacerbated by the scaling down of semiconductor chips and the resulting reduced distances between electronic signal paths.
Innovation Solution
The implementation of semiconductor packages with optical transceivers that utilize infrared rays to transmit and receive optical signals between stacked semiconductor substrates, employing a main and subsidiary optical transceiver configuration with a step structure to maintain effective communication and reduce propagation loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of stacked semiconductor chips is increased to increase integration density, then data processing capacity is improved, but signal distortion and interference between signal paths increase
Solution Approach 1:
The patent replaces electrical signal transmission through copper interconnections with optical signal transmission through infrared rays. Optical transceivers convert electrical signals to optical signals for transmission through the semiconductor substrates, eliminating electromagnetic interference and signal distortion associated with traditional electrical interconnections while enabling higher integration density through vertical stacking
Solution Approach 2:
The patent introduces optical transceivers as intermediary devices between stacked semiconductor chips. These transceivers act as mediators that convert electrical signals to optical signals for transmission through the substrate, and then convert them back to electrical signals at the receiving end, enabling reliable communication through the intermediate semiconductor layers without direct electrical contact
2Volume of moving object
If semiconductor chips are scaled down to increase integration density, then device size is reduced, but distances between signal paths are reduced causing data distortion
Solution Approach 1:
The patent substitutes electrical signal transmission with optical signal transmission using infrared rays. This substitution allows signals to pass through the scaled-down semiconductor substrates without the interference and distortion problems that arise from reduced electrical interconnection distances, enabling continued scaling while maintaining signal integrity
3Productivity
If three dimensional stacking is implemented to increase integration density, then device capacity is improved, but complexity of signal paths increases
Solution Approach 1:
The patent replaces complex electrical signal routing through multiple stacked layers with optical signal transmission. The optical transceivers simplify the signal path by converting electrical signals to optical signals that can pass through the semiconductor substrates more directly, reducing the complexity associated with electrical interconnection routing in three-dimensional stacks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances data transmission efficiency by using infrared rays to reduce signal distortion and interference, allowing for higher integration density and performance in semiconductor packages, particularly in three-dimensional stack configurations.
Implementation Method 1
an optical transceiver generating and receiving optical signals travelling between the package substrate and the second semiconductor substrate using infrared rays that pass through the first semiconductor substrate
Data Source
AI summary
A semiconductor package includes a package substrate, a first semiconductor substrate and a second semiconductor substrate stacked on the package substrate, and an optical transceiver that generates and receives an optical signal travelling between the package substrate and the second semiconductor substrate using an infrared (IR) ray that passes through the first semiconductor substrate.