Optical Transformer Fabrication via Monolithic Integration
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Solution Overview
Problem
Conventional optical transformers face challenges in integration with semiconductor components due to adhesive contraction and differing material compositions, affecting transmission quality and the integration of optical and semiconductor components on a common substrate.
Innovation Solution
A method is developed to fabricate an optical transformer by forming a substrate with defined regions, layering dielectric and conductive materials, and using photo-etching and planarization processes to ensure the layers have the same height, allowing for simultaneous formation of a metal interconnection system and optical transformer within existing semiconductor manufacturing methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If adhesive is used to bond optical transformer onto semiconductor substrate, then optical transformer can be integrated onto substrate, but adhesive contraction during curing decreases coupling effect between optical components
Solution Approach 1:
The patent removes the adhesive bonding step entirely by directly integrating the optical transformer structure into the semiconductor fabrication process. The optical transformer is formed as part of the substrate structure through deposition and etching processes, eliminating the separate bonding operation that caused adhesive contraction and coupling degradation.
Solution Approach 2:
The patent merges the optical transformer fabrication with the semiconductor manufacturing process into a single integrated flow. Both structures are formed simultaneously using the same substrate, deposition layers, and patterning processes, ensuring perfect alignment and eliminating the need for separate bonding operations.
2Ease of manufacture
If optical transformer is formed in advance and then bonded onto substrate, then optical transformer structure can be created, but transmission quality decreases due to adhesive spreading effects
Solution Approach 1:
The patent combines the optical transformer and semiconductor device fabrication into a single unified process. Both structures are formed concurrently on the same substrate using identical deposition, patterning, and etching steps, ensuring perfect alignment and eliminating adhesive-related transmission quality issues.
Solution Approach 2:
The optical transformer structure is formed preliminarily as part of the substrate preparation before semiconductor device fabrication begins. The transformer structure is created through initial deposition and patterning steps, establishing a stable foundation that guides subsequent semiconductor processing without requiring separate bonding operations.
3Reliability
If conventional bonding method is used to integrate optical components, then optical transformer can be mounted onto substrate, but integration with semiconductor components remains problematic
Solution Approach 1:
The patent creates a universal fabrication platform that simultaneously produces both optical transformer structures and semiconductor devices using the same process steps. The methodology is adaptable to various semiconductor technologies including CMOS, enabling broad integration compatibility without requiring technology-specific bonding procedures.
Solution Approach 2:
The patent merges optical component integration directly into the semiconductor manufacturing flow, allowing both structures to be formed on the same substrate using identical process steps. This unified approach enables seamless integration with various semiconductor technologies without requiring separate mounting procedures.
Data Source
AI summary
A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material layer in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer. The present invention further provides a semiconductor structure.