Optical Waveform Analysis for Semiconductor Defect Localization
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Solution Overview
Problem
Existing inspection techniques for semiconductor devices struggle to effectively analyze defective parts, making it difficult to specify the location of defects in complex circuit elements.
Innovation Solution
An analysis method involving optical measurement that calculates the degree of correspondence between waveform data from multiple positions on a defective and non-defective semiconductor device, allowing for the identification of defective parts based on this correspondence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If optical measurement is performed on semiconductor devices with many circuit elements, then measurement data is obtained, but it becomes difficult to specify defective parts effectively
Solution Approach 1:
The patent segments the semiconductor device into multiple measurement regions and divides the analysis into two steps: first performing pattern recognition to identify candidate defective regions, then performing detailed waveform analysis only in those regions. This segmentation approach reduces the complexity of analyzing the entire device while maintaining defect detection accuracy.
Solution Approach 2:
The patent extracts and removes noise components from the measurement waveforms through spectral analysis and filtering techniques. By separating the noise components from the actual defect signals, the analysis can focus on relevant information, reducing complexity while improving defect specification accuracy.
2Measurement precision
If detailed waveform analysis is performed for all positions, then defect detection accuracy is improved, but analysis time increases
Solution Approach 1:
The patent performs preliminary pattern recognition analysis on all measurement positions to identify candidate defective regions before conducting detailed waveform analysis. This preliminary action filters out non-defective regions, so that time-consuming detailed analysis is performed only where necessary, significantly reducing total analysis time while maintaining defect specification accuracy.
Solution Approach 2:
Instead of performing exhaustive detailed waveform analysis on all positions, the patent applies partial analysis only to candidate defective regions identified by pattern recognition. This partial action approach achieves sufficient defect specification accuracy without the time cost of complete analysis across the entire device.
3Measurement precision
If measurement data is collected from multiple positions, then defect localization capability is improved, but data processing complexity increases
Solution Approach 1:
The patent creates a pattern recognition model based on characteristics of defective waveforms and uses this model to compare against measurement data from multiple positions. This copying approach allows systematic identification of defective regions without manually processing each waveform, reducing data processing complexity while maintaining multi-position defect localization capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective analysis of defective semiconductor devices by identifying and localizing defects through the distribution of correspondence in time waveforms, enhancing the accuracy of defect detection.
Implementation Method 1
a light detector configured to detect light from the semiconductor device to which a test signal has been input
Data Source
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AI summary
An inspection apparatus includes a light sensor that detects light from a semiconductor device to which an electric signal has been input, an optical system that guides light from the semiconductor device to the light sensor, and a control device electrically connected to the light sensor. The control device includes a measurement unit that acquires waveform data obtained by optical measurement for each of a plurality of positions on a defective semiconductor device and waveform data obtained by the optical measurement for each of a plurality of positions on a non-defective semiconductor device, a calculation unit that calculates a degree of correspondence between the waveform data of the defective semiconductor device and the waveform data of the non-defective semiconductor device, and an analysis unit that analyzes a defective part of the defective semiconductor device on the basis of the degree of correspondence for each of the plurality of positions.