Optoelectronic Device Insulating Aperture Geometry Control
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Solution Overview
Problem
Current methods for manufacturing optoelectronic devices with semiconductor elements of micrometric or nanometric size face challenges in controlling the growth of semiconductor elements, leading to poor control over geometry, position, and crystallographic properties, resulting in multiple elements growing from a single opening and degrading device performance.
Innovation Solution
The development of an optoelectronic device design featuring insulating layers with specific height and diameter ratios in openings, allowing for precise control of semiconductor element growth, ensuring a single element grows from each opening, and using materials like silicon oxides, silicon nitrides, and aluminum oxides to manage the growth process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to manufacture semiconductor elements, then production can proceed with standard processes, but control over the growth of semiconductor elements is poor, leading to multiple elements growing from a single opening and degradation of device performance
Solution Approach 1:
The patent applies parameter changes by carefully controlling the dimensions of openings in the insulating layer, specifically maintaining a height-to-diameter ratio between 0.5 and 10, and controlling the opening diameter to be 50-500 nm. These parameter adjustments enable precise control over semiconductor element growth, ensuring that only a single element grows per opening while maintaining high device performance and reliability.
2Ease of manufacture
If openings with standard dimensions are used, then fabrication is simpler, but multiple semiconductor elements grow from the same opening, degrading device functioning
Solution Approach 1:
The patent implements parameter changes by specifying precise opening dimensions: height between 100-3000 nm, diameter between 50-500 nm, and height-to-diameter ratio between 0.5 and 10. These controlled parameters ensure that only a single semiconductor element nucleus forms in each opening during growth, achieving manufacturing precision without significantly complicating the fabrication process.
3Manufacturing precision
If the height of openings is increased to control element growth, then single element growth per opening is achieved, but the complexity of the insulating layer structure increases
Solution Approach 1:
The patent resolves this contradiction by optimizing the height parameter within a specific range (100-3000 nm) rather than simply increasing it indefinitely. This controlled height, combined with the diameter constraints and height-to-diameter ratio (0.5-10), achieves single element growth per opening while maintaining a manageable insulating layer structure that can be fabricated with standard techniques.
Data Source
Figure 1~2C
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Figure 6~8B
AI summary
The invention relates to an optoelectronic device (50) comprising semiconductor elements (20), each semiconductor element resting on a carrier (16) through an aperture (54) formed in a portion (52) at least one first part of which is insulating and covers at least partially the carrier, the height (H) of the aperture being larger than or equal to 100 nm and smaller than or equal to 3000 nm and the ratio of the height (H) to the smallest diameter of the aperture (L) being higher than or equal to 0.5 and lower than or equal to 10.